Method for manufacturing semiconductor device including heating and pressuring a laminate having an adhesive layer

ABSTRACT

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a U.S. national phase application filed under 35U.S.C. § 371 of International Application No. PCT/JP2016/081774, filedOct. 26, 2016, designating the United States, which claims priority fromJapanese Patent Application No. 2015-212990, filed Oct. 29, 2015,Japanese Patent Application No. 2016-044788, filed Mar. 8, 2016, andJapanese Patent Application No. 2016-115355, filed Jun. 9, 2016, whichare hereby incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present invention relates to an adhesive for a semiconductor, asemiconductor device, and a method for manufacturing the same.

BACKGROUND ART

Hitherto, to connect a semiconductor chip to a substrate, a wire bondingmethod using metal thin lines such as gold wires is widely used. To meetrequirements for higher functions, larger scale integration, higherspeed, and the like of semiconductor devices, a flip chip connectionmethod (FC connection method) has been becoming popular, in which aconductive projection called a bump is formed on a semiconductor chip ora substrate to directly connect the semiconductor chip to the substrate.

As the flip chip connection method, there are known a method ofperforming metal bonding by using solder, tin, gold, silver, copper, andthe like, a method of performing metal bonding by applying ultrasonicvibration, a method of maintaining mechanical contact by contractiveforce of a resin, and the like, and from the viewpoint of reliability ofa connection portion, a method of performing metal bonding by usingsolder, tin, gold, silver, copper, and the like is generally used.

Examples of the flip chip connection method in connection between thesemiconductor chip and the substrate also include a chip on board (COB)connection method frequently used in ball grid array (BGA), a chip sizepackage (CSP), and the like. The flip chip connection method is alsowidely used in a chip on chip (COC) connection method in which bumps orcircuits are formed on semiconductor chips to connect the semiconductorchips (for example, see Patent Literature 1).

In area-array semiconductor packages used in a CPU, an MPU, and thelike, higher functions are strongly demanded. Specific examples ofdemands include an increase in size of chips, an increase in the numberof pins (bumps or circuits), higher density of pitches and gaps.

In packages strongly required for a further reduction in size andthickness as well as higher functions, chip-stack package includingchips layered and multi-staged by the above-described connection method,package on package (POP), through-silicon via (TSV), and the like arealso spreading widely. Since such layering and multi-staging techniquesdispose semiconductor chips in a stereoscopic manner instead of in aplanar manner so that a smaller package can be attained, thesetechniques are effective in an improvement in performance ofsemiconductors and a reduction in noise, a packaging area, and energyconsumption, and receive attention as a semiconductor wiring techniqueof the next generation.

From the viewpoint of an improvement in productivity, attention also hasbeen paid to a chip on wafer (COW) in which a semiconductor chip ispress-bonded (connected) onto a wafer and then singulated to therebymanufacture a semiconductor package and a wafer on wafer (WOW) in whichwafers are press-bonded (connected) to each other and then singulated tothereby manufacture a semiconductor package. Furthermore, from the samepoint of view, attention also has been paid to a gang bonding method inwhich a plurality of chips are aligned on a wafer or a map substrate andtemporarily press-bonded and the plurality of chips are mainlypress-bonded collectively to secure connection. The gang bonding methodis also used in the aforementioned TSV package (TSV-PKG) and the like.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Unexamined Patent Publication No.2008-294382

SUMMARY OF INVENTION Technical Problem

As the aforementioned flip chip package assembling method, for example,the following method is considered. First, a semiconductor chip fed withan adhesive for a semiconductor is picked up from a diced wafer with acollet and is provided to a pressing member for press-bonding.Subsequently, alignment is performed between a chip and a chip orbetween a chip and a substrate, and then the chips or the chip and thesubstrate are temporarily press-bonded to each other. Then, thetemperature of the pressing member for press-bonding is increased toreach a temperature equal to or higher than a melting point of aconnection portion between the chip and the chip or between the chip andthe substrate and a metallic bond is formed on the connection portion soas to mainly press-bond the chip and the chip or the chip and thesubstrate to each other. In this way, one flip chip package is obtained.Thereafter, the pressing member for press-bonding which has reached ahigh temperature at the time of main press-bonding is cooled and thenthe semiconductor chip is picked up again with the pressing member forpress-bonding. In a case where the adhesive for a semiconductor is fedto the semiconductor chip, the pressing member for press-bonding picksup the semiconductor chip by adsorbing a surface that is opposite to thesurface fed with the adhesive for a semiconductor (surface to beconnected), of the semiconductor chip.

In a cycle from the picking-up to the main press-bonding, since onepressing member for press-bonding is used, the temperature of thepressing member for press-bonding needs to be increased to a hightemperature at which the metal of the connection portion is melt or tobe decreased to a low temperature at which the semiconductor chip fedwith the adhesive for a semiconductor can be picked up. However, ittakes time to change the temperature of the pressing member forpress-bonding, which leads to longer manufacturing time for asemiconductor device. Thus, productivity is likely to be degraded.

In the flip chip connection method in which connection is secured byperforming heating to a temperature equal to or higher than a meltingpoint of the metal of the connection portion, the temperature of thepressing member for press-bonding after the main press-bonding becomeshigh (in a case where the metal of the connection portion is solder, forexample, 240° C. or higher). Here, when the semiconductor chip is pickedup from the collet without cooling the pressing member forpress-bonding, heat of the pressing member for press-bonding istransferred to the collet to increase the temperature of the colletitself. Thus, defects occur at the time of picking-up and thusproductivity is likely to be degraded. Further, in the semiconductorchip fed with the adhesive for a semiconductor, heat of the pressingmember for press-bonding is transferred to the collet to increase thetemperature of the adhesive for a semiconductor by the heat of thecollet. According to this, the sticky properties of the adhesive for asemiconductor are exhibited and the adhesive for a semiconductor iseasily attached to the collet. Thus, productivity is likely to bedegraded. Further, if the temperature of the collet becomes high, whenthe singulated semiconductor chip is picked up from a dicing tape, heatis transferred to the dicing tape through the collet and the pick-upproperties are degraded, which easily results in degraded productivity.

An object of the present invention according to one aspect is to enablehigher productivity to be achieved in manufacturing for a semiconductordevice, including connecting of connection portions to each other bymetal bonding.

Solution to Problem

An aspect of the present invention relates to a method for manufacturinga semiconductor device that includes a semiconductor chip, a substrateand/or another semiconductor chip, and an adhesive layer interposedtherebetween, the semiconductor chip, the substrate, and the anothersemiconductor chip each having a connection portion having a surfaceformed by a metal material, the connection portion of the semiconductorchip and the connection portion of the substrate and/or the anothersemiconductor chip being electrically connected by metal bonding. Themethod sequentially includes the following steps: heating and pressuringa laminate having: the semiconductor chip; the substrate, the anothersemiconductor chip or a semiconductor wafer including a portioncorresponding to the another semiconductor chip; and the adhesive layerdisposed therebetween, the connection portion of the semiconductor chipand the connection portion of the substrate or the another semiconductorchip being disposed to face each other, by interposing the laminate witha pair of facing pressing members for temporary press-bonding to therebytemporarily press-bond the substrate, the another semiconductor chip orthe semiconductor wafer to the semiconductor chip; and heating andpressuring the laminate by interposing the laminate with a pair offacing pressing members for main press-bonding separately prepared fromthe pressing members for temporary press-bonding, to therebyelectrically connect the connection portion of the semiconductor chipand the connection portion of the substrate or the another semiconductorchip by metal bonding. At least one of the pair of pressing members fortemporary press-bonding is heated to a temperature lower than a meltingpoint of the metal material forming the surface of the connectionportion of the semiconductor chip and a melting point of the metalmaterial forming the surface of the connection portion of the substrateor the another semiconductor chip when the laminate is heated andpressured. At least one of the pair of pressing members for mainpress-bonding is heated to a temperature equal to or higher than atleast one melting point of a melting point of the metal material formingthe surface of the connection portion of the semiconductor chip and amelting point of the metal material forming the surface of theconnection portion of the substrate or the another semiconductor chipwhen the laminate is heated and pressured.

When the step of performing temporary press-bonding at a temperaturelower than a melting point of the metal material forming the surface ofthe connection portion and the step of performing main press-bonding ata temperature equal to or higher than a melting point of the metalmaterial forming the surface of the connection portion are performed byusing separate pressing members for press-bonding, a time required forheating and cooling of each of the pressing members for press-bondingcan be shortened. Therefore, a semiconductor device can be manufacturedwith high productivity in a short time as compared to the case ofperforming press-bonding by one pressing member for press-bonding. As aresult, a large number of highly reliable semiconductor devices can bemanufactured in a short time.

In the above-described method, a plurality of semiconductor devices canbe continuously manufactured by repeating the temporary press-bondingand the main press-bonding while a state where the pressing member formain press-bonding is heated to a temperature equal to or higher than amelting point of the metal material forming the surface of theconnection member is maintained.

In a case where the connection portion of the semiconductor chip and theconnection portion of the substrate or the another semiconductor chipare contacted to each other at the time of the temporary press-bonding,flowing and scattering of the metal of the connection portion can besuppressed at the time of the main press-bonding step.

By employing the method in which the step until the temporarypress-bonding and the main press-bonding step are performed by using twopressing members for press-bonding, which are separately prepared, andthe pressing member for main press-bonding is maintained at a hightemperature, a time for heating and cooling the pressing member forpress-bonding can be shortened and thus improvement in productivity canbe expected.

However, in this method, as compared to the conventional method, a hightemperature equal to or higher than the melting point of the metal ofthe connection portion is rapidly applied to the adhesive for asemiconductor at the time of the main press-bonding step. Thus, thecuring of the adhesive for a semiconductor is promoted to causeinsufficient flowing of the resin so that voids entrained at the time ofpress-bonding may remain or voids may be generated by the volatilizationof the resin. Furthermore, since melting of the metal of the connectionportion and the flowing of the resin occur at the same time, failedconnection caused by flowing or scattering of the metal of theconnection portion and trapping of the resin may occur.

In this regard, in order to sufficiently suppress the generation ofvoids and to obtain a semiconductor device which is further excellent inconnection reliability, the melt viscosity of the adhesive layer may be7000 Pa·s or less at a temperature to which the pressing member fortemporary press-bonding is heated. When the melt viscosity of theadhesive layer at the time of the temporary press-bonding step is 7000Pa·s or less, failed connection caused by generation of voids andtrapping of the resin can be more effectively suppressed.

From the viewpoint of an improvement in productivity, since a time forincreasing and decreasing the temperature of the pressing member forpress-bonding is required, the temporary press-bonding and the mainpress-bonding can be performed by the separate pressing members forpress-bonding. Further, in the case of conducting collective connection,since a larger number of semiconductor chips are press-bonded in themain press-bonding as compared to the temporary press-bonding, apressing member for press-bonding provided with a large-areapress-bonding head tends to be used. When the plurality of semiconductorchips are mainly press-bonded collectively in this way so thatconnection can be secured, the productivity of the semiconductor deviceis improved.

When the plurality of semiconductor chips are mainly press-bondedcollectively, a large-area press-bonding head is necessary. However,regarding a large-area press-bonding head that press-bonds a pluralityof packages (for example, tool size: about 20 mm or more), when the areaof the press-bonding head increases, a difference in height between thepackages increases even in the case of the same parallelism, as comparedto a conventional small press-bonding head that has been used when onepackage is assembled (for example, tool size: less than about 20 mm).Therefore, since the area of the press-bonding head increases in thecollective connection in which a plurality of semiconductor chips arepress-bonded, unevenness (a difference in height) easily occur in thepressing portion and thus failed connection may partially occur when theplurality of semiconductor chips are press-bonded to obtain a package.Semiconductor packages, in which a decrease in thickness of thesemiconductor chip, a decrease in size and thickness of the package, orthe like has been developed, require higher degree of accuracy ofconnection.

In this regard, in a case where a plurality of semiconductor chips, aplurality of substrates, and a plurality of other semiconductor chips orsemiconductor wafers are mainly press-bonded collectively, in the stepof electrically connecting the connection portion of the semiconductorchip and the connection portion of the substrate or the anothersemiconductor chip by metal bonding, a plurality of laminates disposedon a stage and a sheet for collective connection disposed to cover theselaminates may be interposed with the stage and the press-bonding headfacing the stage to thereby heat and pressure the plurality of laminatescollectively, in order to decrease the proportion of semiconductordevices with failed connection. The sheet for collective connection mayhave a storage elastic modulus at 250° C. of 10 GPa or less and adisplacement at 250° C. of 40 μm or more. The displacement describedherein means a displacement when a compressive load is 100 N under theenvironment of 250° C. in a compression test in which a rod-shapedpressing jig that has a circular end face having a diameter of 8 μm ispressed against a principal surface of the collective connection sheetin a direction in which the principal surface and the end face becomeparallel to each other.

When the plurality of semiconductor chips (laminates) are press-bonded,by using a sheet for collective connection having a storage elasticmodulus at 250° C. of 10 GPa or less and a displacement at 250° C. of 40μm or more, a difference in height between the plurality of laminates issufficiently absorbed and favorable parallelism is exhibited so thatthese laminates can be more uniformly pressured. Therefore, favorableconnection can be secured in any of semiconductor devices.

In a case where one semiconductor chip is press-bonded by apress-bonding head having the same size as the semiconductor chip orsmaller than the semiconductor chip by several hundred μm, the amount ofa fillet (a portion protruding out from the chip) of the adhesive for asemiconductor is increased. Thus, even when the adhesive for asemiconductor creeps in the press-bonding head direction which pressesthe semiconductor chip, the adhesive for a semiconductor is less likelyto be attached to the press-bonding head. Meanwhile, in a case where aplurality of semiconductor chips are press-bonded by a large-areapress-bonding head, when the amount of the fillet increases and thefillet creeps, the press-bonding head is contaminated by the adhesivefor a semiconductor so that cleaning or the like is necessary. Thus,productivity may be degraded. According to the method for manufacturinga semiconductor device, even when the adhesive protruding out from thesemiconductor chip at the time of press-bonding is attached to the sheetfor collective connection, the sheet for collective connection is easilyreplaced so that productivity is less likely to be degraded.

In a method according to another aspect of the present invention, in thestep of electrically connecting the connection portion of thesemiconductor chip and the connection portion of the substrate or theanother semiconductor chip by metal bonding, the laminate is heated in aheating furnace or on a hot plate to a temperature equal to or higherthan at least one melting point of a melting point of the metal materialforming the surface of the connection portion of the semiconductor chip,or a melting point of the metal material forming the surface of theconnection portion of the substrate or the another semiconductor chip.

Also in the case of this method, by separately performing the step ofperforming temporary press-bonding at a temperature lower than themelting point of the metal material forming the surface of theconnection portion and the step of performing heating at a temperatureequal to or higher than the melting point of the metal material formingthe surface of the connection portion, a time required for heating andcooling the pressing member for temporary press-bonding can beshortened. For this reason, as compared to the case of performingpress-bonding by one pressing member for press-bonding, a semiconductordevice can be manufactured in a short time with high productivity. As aresult, lots of semiconductor devices with high reliability can bemanufactured in a short time.

In the above-described method, the plurality of laminates may becollectively heated in a heating furnace or on a hot plate. According tothis, semiconductor devices can be manufactured with further higherproductivity. The adhesive layer in the above-described method may be alayer containing an adhesive for a semiconductor of [1] to [7] to bedescribed later.

The adhesive layer may be a layer formed by a thermosetting resincomposition containing a thermosetting resin having a molecular weightof 10000 or less and a curing agent therefor. That is, the adhesivelayer may be a layer containing the above thermosetting resincomposition.

The thermosetting resin composition may further contain a polymercomponent having a weight average molecular weight of 10000 or more. Theweight average molecular weight of the polymer component may be 30000 ormore. The glass transition temperature of the polymer component may be100° C. or lower.

The adhesive layer may be a layer formed by an adhesive film which isprepared in advance.

Incidentally, for example, in the gang bonding method in which aplurality of singulated chips are aligned on a wafer or a map substrateand temporarily press-bonded (first step), and then the plurality ofchips are collectively heated and press-bonded by a large-areapress-bonding tool to secure connection (second step), or the method inwhich a plurality of singulated chips are similarly aligned on a waferor a map substrate and temporarily press-bonded (first step), and thenthe plurality of chips are thermally treated in a chamber that iscapable of performing treatment at a high temperature, such as a reflowfurnace or an oven, to secure connection (second step), a plurality ofpackages can be collectively assembled in the second step and animprovement in productivity is expected. In these methods, from theviewpoint of high reliability, a metallic bond tends to be formed byperforming heating to a temperature equal to or higher than a meltingpoint of the metal.

Further, in a case where a semiconductor chip fed with the adhesive fora semiconductor is picked up by a press-bonding tool, when thesemiconductor chip is picked up at a temperature equal to or higher thana melting point of the metal of the connection portion (for example, inthe case of Sn/Ag solder, about 220° C. or higher), picking-up failurecaused by exhibition of the sticky properties of the adhesive for asemiconductor or packaging failure caused by progress of curing of theadhesive for a semiconductor (failed connection or void generation dueto insufficient flowability) occurs and thus it is necessary to cool thepress-bonding tool.

When the package is assembled by separately providing the first step (astep of performing alignment and then temporary press-bonding) and thesecond step (a step of performing a thermal treatment at a temperatureequal to or higher than a melting point of the metal of the connectionportion to secure connection), the cooling of the tool can be omittedand thus productivity is improved.

In the second step, from the viewpoint of fillet suppression and damagesuppression to the connection portion, expectations have been raised forthe method in which a thermal treatment is performed in a chamber thatis capable of performing treatment at a high temperature, such as areflow furnace or an oven, at a low load or no load to secureconnection.

Since the second step is loadless, the flowing of the resin (the flowingof the adhesive for a semiconductor) that affects connection securementand void suppression tends to be scarce. For this reason, it isnecessary to secure flowability in the first step at a low temperature.

By making voidless and securing connection (contact) in the first step,packaging properties after the second step (void suppression, connectionsecurement) can be improved.

In the manufacturing method in which assembling is performed byseparately providing the first step and the second step, which canimprove productivity, the flowability of the adhesive for asemiconductor is scarce and voids are likely to remain, thus connection(contact) is difficult to secure. When void suppression and securementof connection (contact) are not sufficient in the first step, voids mayremain even after the second step and thus failed connection may occur.

Still another aspect of the present invention is made in order to solvethe aforementioned problem, and an object thereof is to provide anadhesive for a semiconductor with which favorable connection (contact)can be secured while voids are suppressed and favorable reflowresistance can be obtained even when used in the method formanufacturing a semiconductor device through the first step and thesecond step, and to provide a method for manufacturing a semiconductordevice and a semiconductor device which use the adhesive for asemiconductor.

According to another aspect of the present invention, there are providedthe following [1] to [7] for the main purpose of securing highreliability (void suppression, connection securement, reflow resistance)even in a method of performing collective assembling in which sufficientflowability is secured in a first step to secure void suppression andconnection (contact) and thus high productivity is expected in a secondstep (heating treatment of a reflow furnace or the like).

[1] An adhesive for a semiconductor, containing: (a) a resin componenthaving a weight average molecular weight of less than 10000; (b) acuring agent; and (c) a silanol compound represented by the followingGeneral Formula (1):R¹-R²—Si(OH)₃  (1)

in the formula, R¹ represents an alkyl group or a phenyl group, and R²represents an alkylene group.

[2] The adhesive for a semiconductor described in [1], in which the R¹is a phenyl group.

[3] The adhesive for a semiconductor described in [1] or [2], in whichthe (c) silanol compound is solid at 25° C.

[4] The adhesive for a semiconductor described in any one of [1] to [3],further containing (d) a polymer component having a weight averagemolecular weight of 10000 or more.

[5] The adhesive for a semiconductor described in [4], in which the (d)polymer component having a weight average molecular weight of 10000 ormore has a weight average molecular weight of 30000 or more and a glasstransition temperature of 100° C. or lower.

[6] The adhesive for a semiconductor described in any one of [1] to [5],in which the adhesive is a film.

[7] The adhesive for a semiconductor described in any one of [1] to [6],in which when a semiconductor device in which connection portions of asemiconductor chip and a wiring circuit substrate are electricallyconnected to each other or a semiconductor device in which connectionportions of a plurality of semiconductor chips are electricallyconnected to each other is manufactured through a first step ofperforming press-bonding at a temperature lower than a melting point ofa metal of the connection portion and a second step of performing aheating treatment at a temperature equal to or higher than a meltingpoint of the metal of the connection portion to form a metallic bond,the adhesive is used for sealing the connection portion.

Advantageous Effects of Invention

According to an aspect of the present invention, higher productivity canbe achieved in manufacturing semiconductor devices that includesconnecting of connection portions to each other by metal bonding.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a process diagram illustrating an example of a step oftemporarily press-bonding a substrate to a semiconductor chip.

FIG. 2 is a process diagram illustrating an example of a step ofelectrically connecting a connection portion of a semiconductor chip anda connection portion of a substrate by metal bonding.

FIG. 3 is a process diagram illustrating an example of a step ofelectrically connecting a connection portion of a semiconductor chip anda connection portion of a substrate by metal bonding using a sheet forcollective connection.

FIG. 4 is a process diagram illustrating an example of a step ofelectrically connecting a connection portion of a semiconductor chip anda connection portion of a substrate by metal bonding.

FIG. 5 is a schematic cross-sectional view illustrating an embodiment ofa semiconductor device.

FIG. 6 is a schematic cross-sectional view illustrating anotherembodiment of a semiconductor device.

FIG. 7 is a schematic cross-sectional view illustrating still anotherembodiment of a semiconductor device.

FIG. 8 is a schematic cross-sectional view illustrating still anotherembodiment of a semiconductor device.

DESCRIPTION OF EMBODIMENTS

Hereinafter, preferable embodiments of the present invention will bedescribed in detail with reference to the drawings in some cases.However, the present invention is not limited to the followingembodiments. In the drawings, some reference numerals are given toidentical or equivalent portions, and duplication of description may beomitted. Positional relations such as up, down, left, and right arebased on positional relations shown in the drawings unless otherwisespecified. Dimensional ratios in the drawings will not be limited toratios shown in the drawings. Upper limits and lower limits of thesenumerical ranges described in the present specification can be in anycombinations. Numerical values described in Examples can also be used asthe upper limits and the lower limits of the numerical ranges. In thepresent specification, “(meth)acryl” means acryl or correspondingmethacryl.

Method for Manufacturing Semiconductor Device

First Embodiment

FIG. 1 is a process diagram illustrating an example of a step oftemporarily press-bonding a substrate to a semiconductor chip in amethod for manufacturing a semiconductor device according to the presentembodiment.

First, as illustrated in FIG. 1(a), a semiconductor chip 1 having asemiconductor chip main body 10 and bumps 30 as connection portions issuperimposed on a substrate 2 having a substrate main body 20 andcircuits 16 as connection portions while an adhesive layer 40 isdisposed therebetween to thereby form a laminate 3. The semiconductorchip 1 is formed by dicing of a semiconductor wafer and then picked upto be conveyed above the substrate 2, and the semiconductor chip 1 isaligned such that the bumps 30 and the circuits 16 as connection portionare disposed to face each other. The laminate 3 is formed on a stage 42of a pressing device for temporary press-bonding 43 having apress-bonding head 41 and the stage 42 as a pair of pressing members fortemporary press-bonding which are disposed to face each other. The bumps30 are provided on the circuits 15 disposed on the semiconductor chipmain body 10. The circuits 16 of the substrate 2 are provided atpredetermined positions on the substrate main body 20. The bumps 30 andthe circuits 16 each have a surface formed by a metal material.

The adhesive layer 40 may be a layer formed by attaching the adhesivefilm, which is prepared in advance, to the substrate 2. The adhesivefilm can be attached by heat press, roll lamination, vacuum lamination,or the like. The applied area and thickness of the adhesive film areproperly set according to the size of the semiconductor chip 1 or thesubstrate 2, the height of the connection portion, and the like. Theadhesive film may be attached to the semiconductor chip 1. The adhesivefilm may be attached to a semiconductor wafer, and then thesemiconductor wafer may be singulated by dicing the semiconductor waferto prepare the semiconductor chip 1 attached with the adhesive film.

Subsequently, as illustrated in FIG. 1(b), the laminate 3 is heated andpressured by interposing the laminate 3 with the stage 42 and thepress-bonding head 41 as the pressing members for temporarypress-bonding to thereby temporarily press-bond the substrate 2 to thesemiconductor chip 1. In the case of the embodiment of FIG. 1, thepress-bonding head 41 is disposed at the semiconductor chip 1 side ofthe laminate 3, and the stage 42 is disposed at the substrate 2 side ofthe laminate 3. The temporary press-bonding may be performed such thatthe connection portion of the semiconductor chip 1 and the connectionportion of the substrate 2 are contacted. According to this, in thesubsequent heating step, the metal bonding between the connectionportions is easily formed and the biting of the adhesive layer betweenthe connection portions can be reduced so that connectivity is furtherimproved.

At least one of the stage 42 or the press-bonding head 41 is heated to atemperature lower than a melting point of the metal material forming thesurface of the bump 30 as the connection portion of the semiconductorchip 1 and a melting point of the metal material forming the surface ofthe circuit 16 as the connection portion of the substrate 2 when thelaminate 3 is heated and pressured for the temporary press-bonding.

In the step of temporarily press-bonding the substrate 2 to thesemiconductor chip 1, the temperature of the pressing member fortemporary press-bonding is preferably low in order not to transfer heatto the semiconductor chip or the like when the semiconductor chip ispicked up. When heating and pressuring for the temporary press-bondingare performed, the pressing member for temporary press-bonding may beheated to such a high temperature as to increase the flowability of theadhesive layer such that voids at the time of entrainment can beremoved. In order to shorten the cooling time, a difference between thetemperature of the pressing member when the semiconductor chip is pickedup and the temperature of the pressing member when the temporarypress-bonding is performed may be small. This temperature difference maybe 100° C. or lower or 60° C. or lower.

This temperature difference may be constant. When the temperaturedifference is 100° C. or lower, the time for cooling the pressing memberfor temporary press-bonding is shortened and thus productivity tends tobe further improved.

The temperature of the pressing member for temporary press-bonding maybe set to be lower than a reaction initiation temperature of theadhesive layer. The reaction initiation temperature is an on-settemperature when exotherm caused by the reaction of the adhesive layeris measured by using DSC (manufactured by PerkinElmer Co., Ltd.,DSC-Pyirs 1) under the conditions including a sample amount of 10 mg, atemperature increasing rate of 10° C./min, and a measurement atmosphereof air or nitrogen.

From the above point of view, the temperature of the stage 42 and/or thepress-bonding head 41 may be, for example, 30° C. or higher 130° C. orlower during the semiconductor chip is picked up, and the temperaturethereof may be, for example, 50° C. or higher 150° C. or lower duringthe laminate 3 is heated and pressured for the temporary press-bonding.

At a temperature T to which the pressing member for temporarypress-bonding is heated for the temporary press-bonding (a temperatureof the pressing member for temporary press-bonding during heating andpressuring the laminate), the melt viscosity of the adhesive layer maybe 7000 Pa·s or less. Herein, the “melt viscosity” refers to theviscosity of the adhesive layer in a molten state at the temperature Twhen measurement is performed with a rheometer (manufactured by AntonPaar Japan K.K., MCR301) by using a measurement jig (a disposable plate(diameter: 8 mm) and a disposable sample dish) under the conditionsincluding a sample thickness of 400 μm, a temperature increasing rate of10° C./min, and frequency of 1 Hz.

The temperature T to which the pressing member for temporarypress-bonding is heated for the temporary press-bonding may be equal toor lower than the reaction initiation temperature of the adhesive layerand a temperature at which the viscosity of the adhesive layer is thelowest and the resin easily flows. However, when the viscosity is toolow, the resin creeps up the chip side surface and is attached to thepressing member for press-bonding, and thus this makes productivity tobe degraded in some cases. For this reason, in the step of the temporarypress-bonding, the melt viscosity of the adhesive layer may be 1000 Pa·sor more at the temperature T to which the pressing member for temporarypress-bonding is heated for the temporary press-bonding.

The load for the temporary press-bonding may be, for example, 0.009 to0.2 N per 1 pin (1 bump) of the semiconductor chip from the viewpoint ofremoving voids between the semiconductor chips or between thesemiconductor chip and the substrate and sufficiently contacting theconnection portions to each other.

FIG. 2 is a process diagram illustrating an example of a step of mainpress-bonding in which a connection portion of a semiconductor chip anda connection portion of a substrate are electrically connected by metalbonding.

As illustrated in FIGS. 2(a) and 2(b), the laminate 3 is further heatedand pressured by using a pressing device for main press-bonding 46having a stage 45 and a press-bonding head 44 as pressing members formain press-bonding, which is separately prepared from the pressingdevice 43. The laminate 3 is heated and pressured by interposing thelaminate 3 with the stage 45 and the press-bonding head 44, andaccordingly, the bumps 30 and the circuits 16 are electrically connectedby metal bonding. According to this, the semiconductor chip 1 and thesubstrate 2 are mainly press-bonded. In the embodiment of FIG. 2, thepress-bonding head 44 is disposed at the semiconductor chip 1 side ofthe laminate 3, and the stage 45 is disposed at the substrate 2 side ofthe laminate 3.

At least one of the stage 45 or the press-bonding head 44 is heated to atemperature equal to or higher than at least one melting point of amelting point of the metal material forming the surface of the bump 30as the connection portion of the semiconductor chip 1, or a meltingpoint of the metal material forming the surface of the circuit 16 as theconnection portion of the substrate 2, when the laminate 3 is heated andpressured. This heating temperature (the temperature of the stage 45and/or the press-bonding head 44 in the main press-bonding) may be 230°C. or higher or 250° C. or higher or may be 330° C. or lower or 300° C.or lower in a case where the metal material of the connection portioncontains solder. When the heating temperature is 230° C. or higher or250° C. or higher, the solder of the connection portion is melted toeasily form a sufficient metallic bond. When the heating temperature is330° C. or lower or 300° C. or lower, voids are less likely to begenerated and the scattering of the solder can be further suppressed.The temperature in the main press-bonding may be constant during thestep of main press-bonding from the viewpoint of eliminating the coolingtime and improving productivity.

The temperature of the stage 45 and/or the press-bonding head 44 may bemaintained to a certain level of temperature or higher during aplurality of semiconductor devices are continuously manufactured byrepeatedly and sequentially heating and pressuring a plurality of thelaminates 3. In other words, while maintaining the stage 45 and/or thepress-bonding head 44 to a certain level of temperature or higher, themain press-bonding may be continuously performed in plural times bysequentially switching the laminates 3. By maintaining the device totemperature in a certain range, the cooling time is not necessary andproductivity is further improved. The temperature of the stage 45 and/orthe press-bonding head 44 may slightly change due to escaping of heat atthe time of contact with external air and the semiconductor chip, butthere is no problem as long as the change is within a range of ±10° C.or lower.

The temperature of the stage 45 and/or the press-bonding head 44 may bea temperature higher than the reaction initiation temperature of theadhesive layer when the laminate is heated and pressured. By promotingthe curing of the adhesive layer during the main press-bonding, voidsuppression and connectivity tend to be further improved.

The pressing member for temporary press-bonding and the pressing memberfor main press-bonding may be respectively provided on two or more ofrespective devices, or both the pressing members may be provided insideone device. A two-head-type device provided with a pressing member fortemporary press-bonding and a pressing member for main press-bonding maybe used.

In the embodiments of FIGS. 1 and 2, the example of the step ofpress-bonding the semiconductor chip and the substrate has beendescribed, but the method for manufacturing a semiconductor device mayinclude a step of press-bonding the semiconductor chips to each other.Instead of the semiconductor chip 1, a semiconductor wafer whichincludes a plurality of portions corresponding to the semiconductor chip1 and has not yet been diced, may be used. The semiconductor chips arepressed against each other while being heated at a temperature equal toor higher than the melting point of the bump to connect thesemiconductor chip to the semiconductor chip and the gap between thesemiconductor chips is filled with the adhesive film such that theconnection portions are sealed. In a case where the metal material ofthe connection portion contains solder, the semiconductor chip may beheated such that the temperature of the connection portion (solderportion) becomes 230° C. or higher or 250° C. or higher. A connectionload depends on the number of bumps, but it is set in consideration ofthe absorption of a variation of the height of the bumps, or the controlof the amount of deformation of the bumps. The connection time may beset to a short time from the viewpoint of an improvement inproductivity. While the solder is melted and an oxide film or a surfaceimpurity is removed, metal bonding may be formed in the connectionportions.

The press-bonding time for the temporary press-bonding and theconnection time (press-bonding time) for the main press-bonding may beset to a short time from the viewpoint of an improvement inproductivity. The short connection time (press-bonding time) means thata time (for example, a time when solder is used) for which theconnection portion is heated to 230° C. or higher during the connectionformation (main press-bonding) is 5 seconds or shorter. The connectiontime may be 4 seconds or shorter or 3 seconds or shorter. When eachpress-bonding time is shorter than the cooling time, the effect of themanufacturing method of the present invention can be further exhibited.

As a pressing device for temporary press-bonding or main press-bonding,a flip chip bonder, a pressure oven, or the like can be used.

In the temporary press-bonding and the main press-bonding, a pluralityof chips may be press-bonded. For example, in the gang bonding in whicha plurality of chips are press-bonded in a planar manner, a plurality ofsemiconductor chips may be temporarily press-bonded one by one to awafer or a map substrate and then the plurality of chips may be mainlypress-bonded collectively.

In the stack press-bonding that is often seen in a package having a TSVstructure, a plurality of chips are press-bonded in a stereoscopicmanner. Also in this case, a plurality of semiconductor chips may bestacked one by one and temporarily press-bonded, and then the pluralityof chips may be mainly press-bonded collectively.

Second Embodiment

A method for manufacturing a semiconductor device according to a secondembodiment also includes a step of temporarily fixing a semiconductorchip and a substrate or another semiconductor chip to obtain a laminate,and then mainly press-bonding the laminate by a pressing member for mainpress-bonding including a stage and a press-bonding head. The step oftemporarily fixing a semiconductor chip and a substrate or anothersemiconductor chip to obtain a laminate may be the same embodiment as inthe temporary press-bonding of the first embodiment. The secondembodiment is different from the first embodiment in that a plurality oflaminates disposed on a stage and a sheet for collective connectiondisposed to cover these laminates are interposed with the stage and thepress-bonding head facing the stage to thereby mainly press-bond theplurality of laminates collectively by being heated and pressured. Theother points of the second embodiment are the similar to those of thefirst embodiment. FIG. 3 is a process diagram illustrating an example ofa step of main press-bonding in which a connection portion of asemiconductor chip and a connection portion of a substrate areelectrically connected by metal bonding using a sheet for collectiveconnection. A laminate having a semiconductor wafer and a plurality ofsemiconductor chips may be disposed on a stage and covered with a sheetfor collective connection.

As illustrated in FIGS. 3(a) and 3(b), the laminate 3 is further heatedand pressured by using the pressing device for main press-bonding 46having the stage 45 and the press-bonding head 44 as pressing membersfor main press-bonding, which is separately prepared from the pressingdevice for temporary press-bonding 43. The plurality of laminates 3 arearranged on the stage 45 and a sheet for collective connection 47 isdisposed to cover the laminates 3. Then, the sheet for collectiveconnection 47 and the plurality of laminates 3 are interposed togetherby the stage 45 and the press-bonding head 44 so that the plurality oflaminates are heated and pressured collectively. According to this, thebumps 30 and the circuits 16 are electrically connected by metalbonding. In the embodiment of FIG. 3, the press-bonding head 44 isdisposed at the semiconductor chip 1 side of the laminate 3 and thestage 45 is disposed at the substrate 2 side of the laminate 3.

The area of the surface of the press-bonding head 44 to which thesemiconductor chip is contacted may be 50 mm×50 mm or more from theviewpoint of collectively press-bonding a larger number of semiconductorchips to improve productivity of the semiconductor device. The area ofthe surface of the press-bonding head 44 to which the semiconductor chipis contacted may be about 330 mm×330 mm from the viewpoint that it cancorrespond to a wafer having a 12-inch size.

Sheet for Collective Connection

The raw material of the sheet for collective connection is notparticularly limited as long as it is a resin exhibiting a specificstorage elastic modulus and a specific displacement at 250° C. Examplesof the resin include polytetrafluoroethylene resins, polyimide resins,phenoxy resins, epoxy resins, polyamide resins, polycarbodiimide resins,cyanate ester resins, acrylic resins, polyester resins, polyethyleneresins, polyethersulfone resins, polyether imide resins, polyvinylacetal resins, urethane resins, and acrylic rubbers. The sheet forcollective connection may be a sheet containing at least one resinselected from polytetrafluoroethylene resins, polyimide resins, epoxyresins, phenoxy resins, acrylic resins, acrylic rubbers, cyanate esterresins, and polycarbodiimide resins from the viewpoint of havingexcellent heat resistance and film forming properties. The resin of thesheet for collective connection may be a sheet containing at least oneresin selected from polytetrafluoroethylene resins, polyimide resins,phenoxy resins, acrylic resins, and acrylic rubbers from the viewpointof having excellent heat resistance and film forming properties. Theseresins can be used singly or in combination of two or more kindsthereof.

When the storage elastic modulus of the sheet for collective connectionat 250° C. is low, favorable connection tends to be easily secured whenthe semiconductor chip is pressed by using the press-bonding head havinga large area. For this reason, the storage elastic modulus of the sheetfor collective connection at 250° C. may be, for example, 10 GPa or lessor 8 GPa or less. When the storage elastic modulus of the sheet forcollective connection at 250° C. is high, the sheet for collectiveconnection has proper softness. Thus, there is a tendency that adifference in height between the plurality of laminates is furtherabsorbed and favorable parallelism is exhibited so that these laminatescan be more uniformly pressured. Therefore, the storage elastic modulusof the sheet for collective connection at 250° C. may be 0.01 GPa ormore or 0.1 GPa or more. The storage elastic modulus at 250° C. can bemeasured by using a general elastic modulus measurement apparatus. Forexample, the viscoelasticity of a sample is measured by using an elasticmodulus measurement apparatus RSA2 (manufactured by RheometricScientific) or the like while the temperature is increased from −30° C.to 300° C. under the conditions including a frequency 10 Hz and atemperature increasing rate of 5° C./min and the storage elastic modulusat 250° C. can be determined from the measurement result.

In the sheet for collective connection, the storage elastic modulus at250° C. may satisfy the above range and the sufficient displacement at250° C. may be, for example, 40 μm or more. When this displacement is 40μm or more, particularly favorable connection can be secured when theplurality of semiconductor chips are mainly press-bonded collectively.The displacement at 250° C. may be 200 μm or less. In thisspecification, the displacement means a displacement when a compressiveload is 100 N under the environment of 250° C. in a compression test inwhich a rod-shaped pressing jig having a circular end face with adiameter of 8 μm is pressed against a principal surface of thecollective connection sheet in a direction in which the principalsurface and the end face become parallel to each other. The displacementcan be, for example, measured by using an electromechanical universaltesting machine (manufactured by INSTRON).

The sheet for collective connection may have high heat resistance. Fromthe viewpoint of enhancing productivity of the semiconductor device, thesheet for collective connection may be a sheet which is not melted whenbeing press-bonded at 250° C. or higher and is not attached to thesemiconductor chip.

The sheet for collective connection may have high transparency from theviewpoint that the pressing member for main press-bonding can recognizean alignment mark (recognition mark for alignment) on the semiconductorchip or the substrate covered with the sheet for collective connection.The transmittance of the sheet for collective connection at a wavelengthof 550 nm may be, for example, 10% or more.

The thickness of the sheet for collective connection can be properlydesigned to satisfy the above properties. The thickness may be, forexample, 50 μm or more, 80 μm or more, or 100 μm or more. The thicknessof the sheet for collective connection may be 300 μm or less.

The sheet for collective connection may be a commercially availableelastic sheet. Examples of the commercially available elastic sheetinclude NITOFLON 900UL (manufactured by Nitto Denko Corporation) andUPILEX SGA (manufactured by Ube Industries, Ltd.).

When the sheet for collective connection having a specific storageelastic modulus and a specific displacement is used, a difference inheight between the plurality of laminates is sufficiently absorbed andfavorable parallelism is exhibited so that these laminates can be moreuniformly pressured. Therefore, further favorable connection can besecured in any of semiconductor devices. Further, since replacement iseasy to conduct even when the adhesive protruding out from thesemiconductor chip at the time of the press-bonding is attached to thesheet for collective connection, productivity is less likely to bedegraded.

Third Embodiment

In a method for manufacturing a semiconductor device according to athird embodiment, subsequent to the same temporary press-bonding as inthe first embodiment, as illustrated in FIG. 4, the temporarilypress-bonded laminate 3 is heated in a heating furnace 60 toelectrically connect the bumps 30 of the semiconductor chip 1 and thecircuits 16 of the substrate 2 by metal bonding. The method according tothe third embodiment is the same as the first embodiment except for theabove-described point. A plurality of laminates may be heated in oneheating furnace 60 to collectively perform connection in the pluralityof laminates.

A gaseous matter in the heating furnace 60 is heated to a temperatureequal to or higher than at least one melting point of a melting point ofthe metal material forming the surface of the connection portion of thesemiconductor chip 1 or a melting point of the metal material formingthe surface of the connection portion of the substrate 2, when thelaminate is heated.

The temperature of the gaseous matter in the heating furnace 60 may be230° C. or higher and 330° C. or lower during the laminate is heated ina case where the metal material of the connection portion containssolder. When the temperature of the gaseous matter in the heatingfurnace 60 is 230° C. or higher, the solder of the connection portion ismelted and thus a sufficient metallic bond is easily formed. When thetemperature of the gaseous matter in the heating furnace 60 is 330° C.or lower, voids are less likely to be generated and the scattering ofthe solder can be further suppressed. The pressure in the heatingfurnace 60 is not particularly limited, but may be atmospheric pressure.

The temperature of the gaseous matter in the heating furnace 60 may be atemperature higher than the reaction initiation temperature of theadhesive layer during the laminate is heated. By promoting the curing ofthe adhesive layer during the heating step, void suppression andconnectivity can be further improved.

The laminate may be heated in a state where a weight is placed on thelaminate or the laminate is fixed with a clip in the heating furnace 60.According to this, the warpage and failed connection generated by adifference in thermal expansion between the semiconductor chip and thesubstrate and between the semiconductor chip and the adhesive layer canbe further suppressed.

As the heating furnace, a reflow furnace, an oven, or the like can beused. Alternatively, the laminate may be heated on a hot plate. In thiscase, the temperature of the hot plate can be set to the sametemperature as that of air in the heating furnace.

The step of connecting the connection portions (heating step) maypromote the curing of the adhesive layer as well as formation of themetallic bond. In the case of performing connection using a pressingmember for press-bonding, the heat of the pressing member forpress-bonding is less likely to be transferred to a fillet that is anadhesive protruding to the chip side surface at the time ofpress-bonding. For this reason, in order to further sufficiently cure afillet portion or the like after connection, a heating treatment step isfurther required. However, in a case where a reflow furnace, an oven, ahot plate, or the like that applies heat to the whole laminate is usedwithout using the pressing member for press-bonding, the heatingtreatment after connection can be shortened or omitted.

Semiconductor Device

A semiconductor device obtained by the method for manufacturing asemiconductor device according to the present embodiment will bedescribed. A connection portion in the semiconductor device according tothe present embodiment may be any of metal bonding between a bump and acircuit or metal bonding between a bump and a bump. In the semiconductordevice according to the present embodiment, for example, flip chipconnection providing electric connection through an adhesive layer canbe used.

FIG. 5 is a schematic cross-sectional view illustrating an embodiment ofa semiconductor device (a COB type connection of a semiconductor chipand a substrate). A semiconductor device 100 illustrated in FIG. 5(a)includes a semiconductor chip 1, a substrate (wiring circuit substrate)2, and an adhesive layer 40 interposed therebetween. In the case of thesemiconductor device 100, the semiconductor chip 1 has a semiconductorchip main body 10, circuits 15 disposed on the surface of thesemiconductor chip main body 10 at the substrate 2 side, and bumps 30 asconnection portions disposed on the circuits 15. The substrate 2 has asubstrate main body 20 and circuits 16 as connection portions disposedon the surface of the substrate main body 20 at the semiconductor chip 1side. The bumps 30 of the semiconductor chip 1 and the circuits 16 ofthe substrate 2 are electrically connected by metal bonding. Thesemiconductor chip 1 and the substrate 2 are flip chip connected throughthe circuits 16 and the bumps 30. The circuits 15 and 16 and the bumps30 are sealed with the adhesive layer 40 to be shielded against anexternal environment.

A semiconductor device 200 illustrated in FIG. 5(b) includes asemiconductor chip 1, a substrate 2, and an adhesive layer 40 interposedtherebetween. In the case of the semiconductor device 200, thesemiconductor chip 1 has bumps 32 as connection portions disposed on thesurface of the semiconductor chip 1 at the substrate 2 side. Thesubstrate 2 has bump 33 as connection portions disposed on the surfaceof the substrate 2 at the semiconductor chip 1 side. The bumps 32 of thesemiconductor chip 1 and the bumps 33 of the substrate 2 areelectrically connected by metal bonding. The semiconductor chip 1 andthe substrate 2 are flip chip connected through bumps 32 and 33. Thebumps 32 and 33 are sealed with the adhesive layer 40 to be shieldedagainst an external environment.

FIG. 6 is a schematic cross-sectional view illustrating anotherembodiment of a semiconductor device (a COC type connection ofsemiconductor chips). The configuration of a semiconductor device 300illustrated in FIG. 6(a) is similar to that of the semiconductor device100, except that two semiconductor chips 1 are flip chip connectedthrough circuits 15 and bumps 30. The configuration of a semiconductordevice 400 illustrated in FIG. 6(b) is similar to that of thesemiconductor device 200, except that two semiconductor chips 1 are flipchip connected through bumps 32.

In FIGS. 5 and 6, the connection portions such as the circuits 15 andthe bumps 32 may be a metal film (for example, gold plating) called apad, or a post electrode (for example, a copper pillar). For example, inFIG. 6(b), in an embodiment in which one semiconductor chip has a copperpillar and a connection bump (solder: tin-silver) as connection portionsand the other semiconductor chip has gold plating as a connectionportion, if the connection portion reaches a temperature equal to orhigher than a melting point of the solder having the lowest meltingpoint among the metal materials of the connection portions, the solderis melted to form metal bonding between the connection portions so thatelectrical connection between the connection portions can be realized.

The semiconductor chip main body 10 is not particularly limited, andvarious semiconductors such as an element semiconductor composed of oneidentical element such as silicon or germanium, and a compoundsemiconductor such as gallium arsenic or indium phosphorus can be used.

The substrate 2 is not particularly limited as long as it is a wiringcircuit substrate, and a circuit substrate having circuits (circuitpattern) formed on the surface of an insulating substrate includingglass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimidetriazine, or the like as a main component by removing unnecessaryportions of a metal layer by etching, a circuit substrate havingcircuits (circuit pattern) formed on the surface of the insulatingsubstrate by metal plating or the like, a circuit substrate havingcircuits (circuit pattern) formed by printing a conductive material onthe surface of the insulating substrate, and the like can be used.

As the materials of the connection portions such as the circuits 15 and16, the bumps 30, and the bumps 32 and 33 (conductive projections),gold, silver, copper, solder (the main component is, for example,tin-silver, tin-lead, tin-bismuth, tin-copper, or tin-silver-copper),tin, nickel, or the like is used as the main component, and theconnection portions may be formed by only single component or aplurality of components. The connection portions may have a structure inwhich these metals are laminated. Among metal materials, copper andsolder are relatively inexpensive. From the viewpoint of improvingconnection reliability and suppressing warpage, the connection portionsmay contain solder.

As the materials of the pads, gold, silver, copper, solder (the maincomponent is, for example, tin-silver, tin-lead, tin-bismuth,tin-copper, or tin-silver-copper), tin, nickel, or the like is used asthe main component, and the pads may be formed by only single componentor a plurality of components. The pads may have a structure in whichthese metals are laminated. From the viewpoint of connectionreliability, the pads may contain gold and/or solder.

A metal layer containing, as the main component, gold, silver, copper,solder (the main component is, for example, tin-silver, tin-lead,tin-bismuth, or tin-copper), tin, nickel, or the like may be formed onthe surfaces of the circuits 15 and 16 (circuit pattern). This metallayer may be formed by only single component or a plurality ofcomponents. The metal layer may have a structure in which a plurality ofmetal layers are laminated. The metal layer may contain copper and/orsolder that are relatively inexpensive. From the viewpoint of improvingconnection reliability and suppressing warpage, the metal layer maycontain solder.

The semiconductor devices (package) as illustrated in FIG. 5 or FIG. 6may be stacked and electrically connected by gold, silver, copper,solder (the main component is, for example, tin-silver, tin-lead,tin-bismuth, tin-copper, tin-silver-copper), tin, nickel, or the like.The metal to be used for connection may be copper and/or solder that isrelatively inexpensive. For example, as seen in the TSV technique, theadhesive layer may be interposed between the semiconductor chips, thesemiconductor chips may be flip chip connected or stacked, holespenetrating through the semiconductor chip may be formed, and electrodeson the patterned surface may be connected.

FIG. 7 is a schematic cross-sectional view illustrating anotherembodiment of the semiconductor device (an embodiment of a semiconductorchip laminate type (TSV)). In a semiconductor device 500 illustrated inFIG. 7, the circuits 15 formed on an interposer main body 50 as thesubstrate are connected to the bumps 30 of the semiconductor chip 1 toflip chip connect the semiconductor chip 1 to an interposer 5. Theadhesive layer 40 is interposed between the semiconductor chip 1 and theinterposer 5. The semiconductor chips 1 are repeatedly laminated on thesurface of the semiconductor chip 1 on the side opposite to theinterposer 5, while the circuits 15, the bumps 30, and the adhesivelayer 40 are provided therebetween. The circuits 15 disposed onpatterned front and rear surfaces of the semiconductor chip 1 areconnected to each other through penetrating electrode 34 provided insideof holes penetrating through the inside of the semiconductor chip mainbody 10. Copper, aluminum, or the like can be used as a material of thepenetrating electrode 34.

Such a TSV technique enables acquisition of signals from the rearsurface of the semiconductor chip that is usually not used. Furthermore,since the penetrating electrode 34 vertically passes through the insideof the semiconductor chip 1, the distance between the facingsemiconductor chips 1 and the distance between the semiconductor chip 1and the interposer 5 are reduced so that flexible connection can beattained. The adhesive layer according to the present embodiment can beapplied as a sealing material between the facing semiconductor chips 1and between the semiconductor chip 1 and the interposer 5 in such a TSVtechnique.

In a bump forming method having high freedom such as an area bump chiptechnique, the semiconductor chip can be directly packaged on a motherboard without an interposer. The adhesive layer according to the presentembodiment can also be applied to such direct packaging of thesemiconductor chip on a mother board. The adhesive layer according tothe present embodiment can also be applied when a gap between substratesis sealed or filled in a case where two wiring circuit substrates arelaminated.

Thermosetting Resin Composition

The adhesive layer can be, for example, a layer formed by athermosetting resin composition containing a thermosetting resin havinga molecular weight of 10000 or less and a curing agent therefor. Inother words, the adhesive layer may be a layer containing athermosetting resin composition containing a thermosetting resin havinga molecular weight of 10000 or less and a curing agent therefor.

(a) Thermosetting Resin

The thermosetting resin is a compound that can form a cross-linkedstructure by heating. The thermosetting resin may have a molecularweight of 10000 or less. When the thermosetting resin compositioncontains a compound (thermosetting resin) that reacts with the curingagent to form a cross-linked structure, voids generated by decompositionor the like of a component having a small molecular weight at the timeof being heated are suppressed, which is advantageous in terms of heatresistance. Examples of the thermosetting resin include an epoxy resinand an acrylic resin.

The weight average molecular weight of the thermosetting resin may be100 to 9000 or 300 to 7000 from the viewpoint of heat resistance andflowability. The measurement method of the weight average molecularweight of the thermosetting resin is the same as the measurement methodof the weight average molecular weight of the (d) polymer componentdescribed later.

(a1) Acrylic Resin

The acrylic resin is a compound having one or more (meth)acryloyl groupsin the molecule. Examples of the acrylic resin include (meth)acrylateshaving a skeleton derived from a compound selected from bisphenol A,bisphenol F, naphthalene, phenol novolak, cresol novolak, phenolaralkyl, biphenyl, triphenylmethane, dicyclopentadiene, fluorene,adamantane, and isocyanuric acid, and a (meth)acryloyloxy group; and avariety of polyfunctional (meth)acrylic compounds. From the viewpoint ofheat resistance, the acrylic resin may be selected from (meth)acrylateshaving a skeleton derived from a compound selected from bisphenol A,bisphenol F, naphthalene, fluorene, adamantane, and isocyanuric acid.The acrylic resin can be used singly or in combination of two or morekinds thereof.

The content of the acrylic resin may be 10 to 50 parts by mass or 15 to40 parts by mass with respect to 100 parts by mass of the total amountof the thermosetting resin composition. When the content of the acrylicresin is 10% by mass or more, the curing component sufficiently existsand thus the flowing of the thermosetting resin composition after beingcured is easily controlled. When the acrylic resin is 50% by mass orless, the warpage of a package caused by excessive hardness of a curedmaterial can be further suppressed.

The acrylic resin may be solid at room temperature (25° C.). The solidacrylic resin is more advantageous than a liquid one in that voids areless likely to be generated, the viscosity (tackiness) of thethermosetting resin composition before being cured (B stage) is small,which provides excellent handling properties. Examples of the acrylicresin that is solid at room temperature (25° C.) include (meth)acrylateshaving a skeleton derived from a compound selected from bisphenol A,fluorene, adamantane, and isocyanuric acid.

The number of (meth)acryloyl groups (the number of functional groups) inthe acrylic resin may be 3 or less. When the number of functional groupsis 3 or less, the thermosetting resin composition can be sufficientlycured in a short time and thus a decrease in the curing reaction ratecan be further suppressed. When the curing reaction rate is low,unreacted groups may remain.

(a2) Epoxy Resin

The epoxy resin is a compound having two or more epoxy groups in themolecule. Examples of the epoxy resin include bisphenol A type epoxyresins, bisphenol F type epoxy resins, naphthalene type epoxy resins,phenol novolak type epoxy resins, cresol novolak type epoxy resins,phenol aralkyl type epoxy resins, biphenyl type epoxy resins,triphenylmethane type epoxy resins, dicyclopentadiene type epoxy resins,and a variety of polyfunctional epoxy resins. From the viewpoint of heatresistance and handling properties, the epoxy resin may be selected frombisphenol F type epoxy resins, phenol novolak type epoxy resins, cresolnovolak type epoxy resins, biphenyl type epoxy resins, andtriphenylmethane type epoxy resins. The epoxy resin can be used singlyor in combination of two or more kinds thereof.

The content of the epoxy resin may be 10 to 50 parts by mass withrespect to 100 parts by mass of the total amount of the thermosettingresin composition. When the content of the epoxy resin is 10 parts bymass or more, the curing component sufficiently exists and thus theflowing of the thermosetting resin composition after being cured iseasily controlled. When the content of the epoxy resin is 50 parts bymass or less, the warpage of a package caused by excessive hardness of acured material can be further suppressed.

(b) Curing Agent

The curing agent is a compound that reacts with the thermosetting resinto form a cross-linked structure together with the thermosetting resin.Examples of the curing agent include phenol resin-based curing agents,acid anhydride-based curing agents, amine-based curing agents,imidazole-based curing agents, phosphine-based curing agents, azocompounds, and organic peroxides. The curing reaction (curing system)may be radical polymerization (radical polymerization system). Thecuring agent can be used singly or in combination of two or more kindsthereof. The phenol resin-based curing agent, the acid anhydride-basedcuring agent, and the amine-based curing agent each can be used singlyor as a mixture of two or more kinds thereof. The imidazole-based curingagent and the phosphine-based curing agent each may be used singly, ormay be used together with the phenol resin-based curing agent, the acidanhydride-based curing agent, or the amine-based curing agent.

The combination of the thermosetting resin and the curing agent is notparticularly limited as long as curing progresses. The curing agentcombined with the acrylic resin may be an organic peroxide from theviewpoint of handling properties and storage stability. The curing agentcombined with the epoxy resin may be selected from a phenol resin-basedcuring agent and an imidazole-based curing agent, an acidanhydride-based curing agent and an imidazole-based curing agent, anamine-based curing agent and an imidazole-based curing agent, and animidazole-based curing agent singly, from the viewpoint of beingexcellent in handling properties, storage stability, and curability.Since productivity is improved when curing is performed in a short time,the imidazole-based curing agent, which is excellent in rapid curabilityand storage stability, may be used singly. When the thermosetting resincomposition is cured in a short time, the amount of volatile componentssuch as low-molecular-weight components can be reduced and thusgeneration of voids can be further suppressed. The curing agent combinedwith the acrylic resin may be an organic peroxide or an azo compoundfrom the viewpoint of handling properties and storage stability.

(b1) Phenol Resin-Based Curing Agent

The phenol resin-based curing agent has two or more phenolic hydroxylgroups in the molecule. Examples of the phenol resin-based curing agentinclude phenol novolak resins, cresol novolak resins, phenol aralkylresins, cresol naphthol formaldehyde polycondensates, triphenylmethanetype polyfunctional phenol resins, and various polyfunctional phenolresins. These can be used singly or in combination of two or more kindsthereof.

The equivalent ratio of the phenol resin-based curing agent to the epoxyresin (phenolic hydroxyl group/epoxy group, molar ratio) may be 0.3 to1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of being excellent incurability, adhesiveness, and storage stability. When the equivalentratio is 0.3 or more, there is a tendency that curability is improved soas to further improve the adhesive force. When the equivalent ratio is1.5 or less, there is a tendency that a non-reacted phenolic hydroxylgroup does not excessively remain and a moisture absorbing rate issuppressed to be low, thereby further improving insulation reliability.

(b2) Acid Anhydride-Based Curing Agent

Examples of the acid anhydride-based curing agent includemethylcyclohexane tetracarboxylic dianhydride, trimellitic anhydride,pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, andethylene glycol bisanhydrotrimellitate. These can be used singly or incombination of two or more kinds thereof.

The equivalent ratio of the acid anhydride-based curing agent to theepoxy resin (acid anhydride group/epoxy group, molar ratio) may be 0.3to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of being excellentin curability, adhesiveness, and storage stability. When the equivalentratio is 0.3 or more, there is a tendency that curability is improved soas to further improve the adhesive force. When the equivalent ratio is1.5 or less, there is a tendency that a non-reacted acid anhydride isdifficult to excessively remain and a moisture absorbing rate issuppressed to be low, thereby further improving insulation reliability.

(b3) Amine-Based Curing Agent

Examples of the amine-based curing agent include dicyandiamide anddodecanediamide. These can be used singly or in combination of two ormore kinds thereof.

The equivalent ratio of the amine-based curing agent to the epoxy resin(the number of active hydrogens of the amino group/epoxy group, molarratio) may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpointof being excellent in curability, adhesiveness and storage stability.When the equivalent ratio is 0.3 or more, there is a tendency thatcurability is improved so as to further improve the adhesive force. Whenthe equivalent ratio is 1.5 or less, insulation reliability tends to beimproved since a non-reacted amine is difficult to excessively remain.

(b4) Imidazole-Based Curing Agent

Examples of the imidazole-based curing agent include 2-phenylimidazole,2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole,1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole,1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate,1-cyanoethyl-2-phenylimidazolium trimellitate,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-undecylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuricacid adducts, 2-phenylimidazole isocyanuric acid adducts,2-phenyl-4,5-dihydroxymethylimidazole,2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resinsand imidazoles. From the viewpoint of being excellent in curability,storage stability, and connection reliability, the imidazole-basedcuring agent may be selected from 1-cyanoethyl-2-undecylimidazole,1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate,1-cyanoethyl-2-phenylimidazolium trimellitate,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2 ‘-methylimidazolyl-(1’)]-ethyl-s-triazine isocyanuricacid adducts, 2-phenylimidazole isocyanuric acid adducts,2-phenyl-4,5-dihydroxymethylimidazole, and2-phenyl-4-methyl-5-hydroxymethylimidazole. These can be used singly orin combination of two or more kinds thereof. Further, these may also beused as a microcapsulized latent curing agent.

The content of the imidazole-based curing agent may be 0.1 to 20 partsby mass, or 0.1 to 10 parts by mass with respect to 100 parts by mass ofthe epoxy resin. When the content thereof is 0.1 part by mass or more,curability tends to be improved. When the content thereof is 20 parts bymass or less, failed connection tends to hardly occur since thethermosetting resin composition is difficult to cure before metalbonding is formed.

(b5) Phosphine-Based Curing Agent

Examples of the phosphine-based curing agent include triphenylphosphine,tetraphenylphosphonium tetraphenylborate, tetraphenylphosphoniumtetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate. These can be used singly or in combination oftwo or more kinds thereof.

The content of the phosphine-based curing agent may be 0.1 to 10 partsby mass, or 0.1 to 5 parts by mass with respect to 100 parts by mass ofthe epoxy resin. When the content thereof is 0.1 part by mass or more,curability tends to be improved. When the content thereof is 10 parts bymass or less, failed connection tends to hardly occur since thethermosetting resin composition is difficult to cure before metalbonding is formed.

(b6) Azo Compound

Examples of the azo compound include dimethylaminoazobenzene,dimethylaminoazobenzene-carboxylic acid, diethylaminoazobenzene, anddiethylaminoazobenzene-carboxylic acid. The azo compound can be usedsingly or in combination of two or more kinds thereof.

The content of the azo compound may be 0.5 to 10 parts by mass or 1 to 5parts by mass with respect to 100 parts by mass of the acrylic resin.When the content thereof is 0.5 parts by mass or more, curability tendsto be improved. When the content thereof is 10 parts by mass or less,failed connection tends to hardly occur since the thermosetting resincomposition is difficult to cure before metal bonding is formed.

(b7) Organic Peroxide

Examples of the organic peroxide include ketone peroxide, peroxy ketal,hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxy dicarbonate,and peroxy ester. The organic peroxide may be one or more selected fromhydroperoxide, dialkyl peroxide, and peroxy ester from the viewpoint ofstorage stability. The organic peroxide may be one or more selected fromhydroperoxide and dialkyl peroxide from the viewpoint of heatresistance. These can be used singly or in combination of two or morekinds thereof.

The content of the organic peroxide is preferably 0.5 to 10 parts bymass and more preferably 1 to 5 parts by mass with respect to 100 partsby mass of the acrylic resin. When the content thereof is 0.5 parts bymass or more, curability tends to be improved. When the content thereofis 10 parts by mass or less, failed connection tends to hardly occursince the thermosetting resin composition is difficult to cure beforemetal bonding is formed. Further, when the content thereof is properlysmall, since curing rapidly progresses to increase the number ofreactive sites, a decrease in reliability caused by shortening of amolecule chain or remaining of unreacted groups is less likely to occur.

(c) Polymer Component

The thermosetting resin composition according to the present embodimentmay further contain a polymer component having a weight averagemolecular weight of 10000 or more. The weight average molecular weightor the molecular weight of components other than the polymer component,such as a thermosetting resin and a curing agent, is typically less than10000. Examples of the polymer component include epoxy resins, phenoxyresins, polyimide resins, polyamide resins, polycarbodiimide resins,cyanate ester resins, acrylic resins, polyester resins, polyethyleneresins, polyethersulfone resins, polyether imide resins, polyvinylacetal resins, urethane resins, and acrylic rubbers. From the viewpointof being excellent in heat resistance and film forming properties, thepolymer component may be selected from epoxy resins, phenoxy resins,polyimide resins, acrylic resins, acrylic rubbers, cyanate ester resins,and polycarbodiimide resins. From the viewpoint of having furtherexcellent heat resistance and film forming properties, the polymercomponent may be selected from epoxy resins, phenoxy resins, polyimideresins, acrylic resins, and acrylic rubbers. These polymer componentscan be used singly or in combination of two or more kinds thereof.

The mass ratio between the polymer component and the acrylic resin isnot particularly limited. The content of the acrylic resin may be 0.01to 10 parts by mass, 0.05 to 5 parts by mass, or 0.1 to 5 parts by masswith respect to 1 part by mass of the polymer component. When the massratio is 0.01 part by mass or more, there is a tendency that curabilityis improved to further improve the adhesive force. When the mass ratiois 10 parts by mass or less, the film forming properties of thethermosetting resin composition tend to be particularly excellent.

The mass ratio between the polymer component and the epoxy resin is notparticularly limited. The content of the epoxy resin may be 0.01 to 5parts by mass, 0.05 to 4 parts by mass, or 0.1 to 3 parts by mass withrespect to 1 part by mass of the polymer component. When the mass ratiois 0.01 part by mass or more, there is a tendency that curability isimproved to further improve the adhesive force. When the mass ratio is 5parts by mass or less, the film forming properties and the membraneforming properties of the thermosetting resin composition tend to beparticularly excellent.

The glass transition temperature (Tg) of the polymer component may be120° C. or lower, 100° C. or lower, or 85° C. or lower from theviewpoint of excellent adhesion of the thermosetting resin compositionto the substrate and the chip. The Tg of the polymer component may be 0°C. or higher. When the Tg of the polymer component is 120° C. or lower,the thermosetting resin composition can easily embed the heightdifference of bumps formed on the semiconductor chip, and electrodes orcircuit patterns formed on the substrate, and thus there is a tendencythat remaining of air bubbles is suppressed so that voids are lesslikely to be generated. In this specification, the Tg means a valueobtained by differential scanning calorimetry using DSC (manufactured byPerkinElmer Co., Ltd., DSC-7 type) under the conditions including asample amount of 10 mg, a temperature increasing rate of 10° C./min, anda measurement atmosphere of air.

The weight average molecular weight of the polymer component may be10000 or more in terms of polystyrene, and in order to independentlyexhibit favorable film forming properties, the weight average molecularweight thereof may be 30000 or more, 40000 or more, or 50000 or more. Inthis specification, the weight average molecular weight means a weightaverage molecular weight in terms of polystyrene obtained by measurementusing high-performance liquid chromatography (manufactured by SHIMADZUCORPORATION, C-R4A).

(d) Filler

The thermosetting resin composition according to the present embodimentmay further contain a filler in order to control the viscosity and thephysical properties of the cured material, and in order to furthersuppress the generation of the voids when the semiconductor chip and thesubstrate are connected, and a moisture absorption rate. Examples of thefiller include an inorganic filler and a resin filler. Examples of theinorganic filler include insulating inorganic fillers made of glass,silica, alumina, titanium oxide, carbon black, mica, boron nitride, andthe like. From the viewpoint of handling properties, the inorganicfiller may be selected from silica, alumina, titanium oxide, and boronnitride, and from the viewpoint of formation uniformity (handlingproperties), the inorganic filler may be selected from silica, alumina,and boron nitride. The insulating inorganic filler may be a whisker.Examples of the whisker include aluminum borate, aluminum titanate, zincoxide, calcium silicate, magnesium sulfate, and boron nitride. Examplesof the resin filler include polyurethane, polyimide, methyl methacrylateresin, and methyl methacrylate-butadiene-styrene copolymer resin (MBS).The filler can be used singly or in combination of two or more kindsthereof. The shape, the particle size, and the content of the filler arenot particularly limited.

From the viewpoint of having excellent insulation reliability, thefiller has insulation properties. The thermosetting resin compositionaccording to the present embodiment may not substantially contain aconductive metal filler such as a silver filler or a solder filler. Forexample, the content of the conductive metal filler may be less than 1%by mass on the basis of the whole solid content (components other thanthe solvent) of the thermosetting resin composition.

The physical properties of the filler may be properly adjusted by asurface treatment. From the viewpoint of dispersibility and improvementin adhesive force, the filler may be a filler subjected to a surfacetreatment. Examples of a surface treatment agent include glycidyl-based(epoxy-based), amine-based, phenyl-based, phenylamino-based,(meth)acrylic-based, and vinyl-based compounds.

As the surface treatment, from the ease of the surface treatment, asilane treatment using a silane compound such as an epoxysilane-based,aminosilane-based, or acrylic silane-based compound is preferable. Thesurface treatment agent may be a compound selected from glycidyl-based,phenylamino-based, acrylic-based, and methacrylic-based compounds fromthe viewpoint of having excellent dispersibility, flowability, andadhesive force. From the viewpoint of storage stability, the surfacetreatment agent may be a compound selected from phenyl-based,acrylic-based, and methacrylic-based compounds.

The average particle size of the filler may be 1.5 μm or less from theviewpoint of preventing the biting at the time of flip chip connection.The average particle size of the filler may be 1.0 μm or less from theviewpoint of having excellent visibility (transparency). The particlesize of the filler means a major axis diameter of the particle.

The resin filler can provide flexibility at a high temperature such as260° C. as compared to the inorganic filler and thus the resin filler issuitable for improving reflow resistance. Further, the resin filler canprovide flexibility and thus the resin filler also contributes toimprovement in film forming properties of the thermosetting resincomposition.

The content of the filler may be 30 to 90% by mass or 40 to 80% by masson the basis of the whole solid content (components other than thesolvent) of the thermosetting resin composition. When the contentthereof is 30% by mass or more, heat dissipation properties of thethermosetting resin composition are enhanced and the generation of voidsand the moisture absorption rate can be further suppressed. When thecontent thereof is 90% by mass or less, a decrease in flowability of thethermosetting resin composition caused by high viscosity and the biting(trapping) of the filler to the connection portion can be suppressed andthus connection reliability tends to be further improved.

(e) Fluxing Agent

The thermosetting resin composition according to the present embodimentmay further contain a fluxing agent (that is, a fluxing active agentexhibiting fluxing activity (activity for removing oxides orimpurities)). Examples of the fluxing agent include nitrogen-containingcompounds having unshared electron pairs (imidazole, amines, and thelike), carboxylic acids, phenols, and alcohols. Organic acids(carboxylic acids such as 2-methyl glutaric acid, and the like) stronglyexhibit fluxing activity as compared to alcohols and the like, which canfurther improve connectivity and stability.

The content of the fluxing agent may be 0.005 to 10.0% by mass or 0.005to 0.05% by mass on the basis of the whole solid content (componentsother than the solvent) of the thermosetting resin composition.

The thermosetting resin composition according to the present embodimentmay further contain an additive such as an ion trapper, an antioxidant,a silane coupling agent, a titanium coupling agent, or a leveling agent.The additive can be used singly or in combination of two or more kindsthereof. The content of the additive may be properly adjusted to exhibitthe effects of the respective additives.

The curing reaction rate when the thermosetting resin compositionaccording to the present embodiment is held at 200° C. for 5 seconds maybe 80% or more or 90% or more. When the curing reaction rate of thethermosetting resin composition when held for 5 seconds at 200° C.,which is a temperature equal to or lower than a solder meltingtemperature, is 80% or more, there is a tendency that solder is lesslikely to scatter and flow at a temperature during connection equal toor higher than the solder melting temperature and connection reliabilityand insulation reliability are further improved. The curing reactionrate can be obtained by putting 10 mg of an uncured andthermally-treated thermosetting resin composition (film adhesive) intoan aluminum pan, and then performing differential scanning calorimetryto the thermosetting resin composition at a temperature increasing rate20° C./min in a temperature range of 30 to 300° C. using DSC(manufactured by PerkinElmer Co., Ltd., DSC-7 type). For example, thecuring reaction rate is calculated by the following equation when thecalorific value ΔH (J/g) of an untreated sample in differential scanningcalorimetry is designated as “ΔH1” and the calorific value ΔH (J/g) ofthe sample after being thermally treated on a hot plate at 200° C./5 secis designated as “ΔH2.”Curing reaction rate (%)=(ΔH1−ΔH2)/ΔH1×100

In a case where the curing reaction (curing system) of the thermosettingresin composition is radical polymerization, if the thermosetting resincomposition contains an anionic polymerizable epoxy resin (particularly,an epoxy resin having a weight average molecular weight of less than10000), it may be difficult to adjust the curing reaction rate to 80% ormore. In a case where the thermosetting resin composition contains anacrylic resin and an epoxy resin, the content of the epoxy resin may be20 parts by mass or less with respect to 80 parts by mass of the acrylicresin.

The thermosetting resin composition according to the present embodimentcan be used in press-bonding at a high temperature of 200° C. or higher.Further, in a flip chip package in which a metal such as solder ismelted to form connection, further excellent curability is exhibited.

The adhesive layer according to the present embodiment may be a layerformed by an adhesive film which is prepared in advance from theviewpoint of improving productivity. An example of the method forproducing an adhesive film will be described below.

First, as necessary, a thermosetting resin, a curing agent, a polymercomponent, a filler, other additives, and the like are added into anorganic solvent, and are then dissolved or dispersed by stirring andmixing, kneading, or the like to prepare a resin varnish. Subsequently,the resin varnish is applied onto a base film subjected to a releasingtreatment using a knife coater, a roll coater, an applicator, a diecoater, a comma coater, or the like, and the organic solvent is thendecreased by heating to form an adhesive film on the base film. Anadhesive film may be formed on a wafer by a method of applying a resinvarnish onto the wafer and the like by spin coating to form a film, andthen drying a solvent before decreasing the organic solvent by heating.

The base film is not particularly limited as long as it has heatresistance to endure a heating condition during volatilization of theorganic solvent, and examples thereof include a polyester film, apolypropylene film, a polyethylene terephthalate film, a polyimide film,a polyether imide film, a polyether naphthalate film, and amethylpentene film. The base film is not limited to a single layercomposed of one of these films, and may be a multi-layer film composedof two or more films.

As a condition when the organic solvent is volatized from the appliedresin varnish, for example, heating may be performed at 50 to 200° C.for 0.1 to 90 minutes. A heating condition that the organic solvent isvolatized to 1.5% or less may be used as long as the volatilization ofthe organic solvent does not affect voids after packaging or viscosityadjustment.

Adhesive for Semiconductor

The adhesive for a semiconductor according to an embodiment contains(a′) a resin component having a weight average molecular weight of lessthan 10000, (b) a curing agent, and (f) a silanol compound representedby the following General Formula (1):R¹-R²—Si(OH)₃  (1)

In the formula, R¹ represents an alkyl group, a phenyl group, or a groupformed of a combination thereof, and R² represents an alkylene group.This adhesive for a semiconductor may be used as the thermosetting resincomposition for forming an adhesive layer in the method formanufacturing a semiconductor device.

The adhesive for a semiconductor according to the present embodiment mayfurther contain (c) a polymer component having a weight averagemolecular weight of 10000 or more, a fluxing agent, a filler, and thelike. Hereinafter, respective components will be described.

(a′) Resin Component Having Weight Average Molecular Weight of Less than10000

The (a′) resin component having a weight average molecular weight ofless than 10000 is not particularly limited, but may be a compound(thermosetting resin) that reacts with the (b) curing agent. A componenthaving a small weight average molecular weight may be, for example,decomposed at the time of being heated to cause voids, but reaction ofthe component with the curing agent makes it easy to secure high heatresistance. Examples of the resin component having a weight averagemolecular weight of less than 10000 include epoxy resins and acrylicresins. In a case where the (a′) resin component having a weight averagemolecular weight of less than 10000 is a thermosetting resin, the (a′)resin component can be the same embodiment as the aforementioned “(a)thermosetting resin.”

The (d) curing agent and the other embodiments related to thesemiconductor adhesive can be the same embodiment as the aforementioned“(d) curing agent” and the other embodiments related to thethermosetting resin composition.

(f) Silanol Compound

The silanol compound represented by the above General Formula (1) may besolid at 25° C. from the viewpoint of heat resistance. R¹ in Formula (1)may be an alkyl group or a phenyl group from the viewpoint of heatresistance and flowability. R¹ may be a group formed of a combination ofan alkyl group and a phenyl group (an alkyl-substituted phenyl group ora phenylalkyl group). Examples of the group represented as R¹ include aphenyl group, a propyl group, a phenylpropyl group, and a phenylmethylgroup. R² in Formula (1) is not particularly limited, but may be analkylene group having a weight average molecular weight of 100 to 5000from the viewpoint of heat resistance. The silanol compound in which R²is an alkylene group having a weight average molecular weight of 100 to5000 has typically a weight average molecular weight in a range of about100 to 5000. From the viewpoint of high reactivity (strength of a curedmaterial), the silanol compound may be a trifunctional silanol.

By adding the (f) silanol compound to the adhesive for a semiconductor,flowability is improved and void suppression and high connectivity arefurther improved. When flowability is improved (the viscosity isdecreased), voids entrained at the time of chip contact are easilyremoved. The (f) silanol compound has high heat resistance and thethermal weight loss amount thereof is small. When the silanol compoundhaving high heat resistance is used, the generation of voids can befurther suppressed. When the thermal weight loss amount is small, theamount of volatile components is small and thus voids are decreased andreliability (reflow resistance) is further improved.

The content of the (f) silanol compound may be 2 to 20% by mass on thebasis of the total amount of the adhesive for a semiconductor(components other than the solvent), and may be 2 to 10% by mass or 2 to9% by mass from the viewpoint of high flowability and the strength of acured material (adhesive force or the like). When the content thereof is2% by mass or more, a significant effect is easily exhibited in terms ofhigh flowability. When the content thereof is 20% by mass or less, thestrength after curing is increased so that particularly high adhesiveforce tends to be exhibited. When the content of the (f) silanolcompound is small to some extent, the proportion of the cured materialof the epoxy resin or the acrylic resin is increased and thus higheradhesive force is assumed to be exhibited.

The adhesive for a semiconductor may be a film, that is, may be anadhesive film. The film semiconductor adhesive can be produced in thesame manner as in the aforementioned example of the method for producingan adhesive film, except that the resin varnish contains the (f) silanolcompound.

The adhesive for a semiconductor according to the present embodiment issuitably used particularly in sealing the connection portions, forexample, in a semiconductor device in which connection portions of asemiconductor chip and a wiring circuit substrate are electricallyconnected to each other or in a semiconductor device in which connectionportions of a plurality of semiconductor chips are electricallyconnected to each other.

Semiconductor devices using the adhesive for a semiconductor accordingto the present embodiment will be described. A connection portion in thesemiconductor device may be any of metal bonding between a bump and acircuit and metal bonding between a bump and a bump. In thesemiconductor device, for example, flip chip connection in whichelectric connection is obtained through the adhesive for a semiconductormay be used. Examples of the semiconductor device are as illustrated inFIGS. 4 to 7. The connection is conducted between the bump and the bump,between the bump and the pad, and between the bump and the circuit whichare described above.

The method for manufacturing a semiconductor device according to thepresent embodiment may include connecting a semiconductor chip and awiring circuit substrate or a plurality of semiconductor chips to eachother by using the adhesive for a semiconductor according to the presentembodiment. The method for manufacturing a semiconductor deviceaccording to the present embodiment includes, for example, a step ofconnecting a semiconductor chip and a wiring circuit substrate to eachother through the adhesive for a semiconductor and electricallyconnecting connection portions of the semiconductor chip and the wiringcircuit substrate to each other to obtain a semiconductor device, or astep of connecting a plurality of semiconductor chips to each otherthrough the adhesive for a semiconductor and electrically connectingconnection portions of the plurality of semiconductor chips to eachother to obtain a semiconductor device.

In the method for manufacturing a semiconductor device according to thepresent embodiment, the connection portions can be connected to eachother by metal bonding. That is, the connection portions of thesemiconductor chip and the wiring circuit substrate are connected toeach other by metal bonding, or the connection portions of the pluralityof semiconductor chips are connected to each other by metal bonding.

The adhesive for a semiconductor according to the present embodiment canbe used as the thermosetting resin composition in the aforementionedsemiconductor device according to the first, second, or thirdembodiment. Since the adhesive for a semiconductor according to thepresent embodiment has high flowability at a high temperature, theadhesive for a semiconductor according to the present embodiment isparticularly useful in the third embodiment using a heating furnace or ahot plate as a heating apparatus for the main press-bonding.

As another example of the method for manufacturing a semiconductordevice using the adhesive for a semiconductor according to the presentembodiment, a method for manufacturing a semiconductor device 600according to an embodiment illustrated in FIG. 8 will be described. Inthe semiconductor device 600, a substrate (for example, a glass epoxysubstrate) 2 having a substrate main body 20 and circuits (coppercircuits) 15 as connection portions and a semiconductor chip 1 having asemiconductor chip main body 10 and circuits (for example, copperpillars or copper posts) 15 and bumps 30 (connection bumps or solderbumps) as connection portions are connected to each other through anadhesive layer 40 formed from an adhesive for a semiconductor. Thecircuits 15 of the semiconductor chip 1 and the circuits 15 of thesubstrate 2 are electrically connected by the bumps 30 (connection bumpsor solder bumps). A solder resist 70 is disposed on the surface on whichthe circuits 15 are formed in the substrate main body 20, except for thepositions where the bumps 30 are formed. Gold plating is conducted tothe circuits 15 in the substrate 2. The metal of the connection portionis solder (tin-silver)-gold, and if solder having a low melting pointreaches the melting point or higher, connection can be realized. Thesemiconductor device 600 may be a semiconductor device in whichsemiconductor chips are connected to each other. That is, instead of thesubstrate 2, another semiconductor chip may be connected to thesemiconductor chip 1.

In the method for manufacturing the semiconductor device 600, first, anadhesive for a semiconductor (a film adhesive or the like) as theadhesive layer 40 is attached onto the substrate 2 on which the solderresist 70 is formed. The adhesive for a semiconductor can be attached byheat press, roll lamination, vacuum lamination, or the like. The appliedarea and thickness of the adhesive layer 40 are properly set accordingto the size of the semiconductor chip 1 or the substrate 2, or the like.The adhesive layer 40 may be attached to the semiconductor chip 1, orthe adhesive for a semiconductor according to the present embodiment maybe attached to a semiconductor wafer, and then the semiconductor wafermay be singulated to the semiconductor chip 1 by dicing to prepare thesemiconductor chip 1 attached with the adhesive layer 40. After theadhesive layer 40 is attached to the substrate 2 or the semiconductorchip 1, the bumps 30 on the circuits 15 of the semiconductor chip 1 andthe circuits 15 of the substrate 2 are aligned with a connectionapparatus (a press-bonding apparatus) such as a flip chip bonder andthen press-bonded (first step, temporary press-bonding). Then, thesemiconductor chip 1 and the substrate 2 are heated to a temperatureequal to or higher than the melting point of the bump 30 (second step,main press-bonding) to connect the semiconductor chip 1 and thesubstrate 2 and the gap between the semiconductor chip 1 and thesubstrate 2 are filled with the adhesive layer 40 such that theconnection portions are sealed. The main press-bonding (main connectionstep, second step) may be performed such that the metal of any one ofthe connection portions becomes equal to or higher than the meltingpoint. In a case where the bump 30 contains solder, the semiconductorchip 1 and the substrate 2 may be heated such that the temperature ofthe bump 30 becomes 250° C. or higher.

A connection load of the temporary press-bonding (first step) depends onthe number of bumps, but it is set in consideration of the absorption ofa variation of the height of the bumps, or the control of the amount ofdeformation of the bumps. After the temporary press-bonding (firststep), the metals of the connection portions between the semiconductorchip 1 and the substrate 2 may be contacted. When the metals of theconnection portions are contacted or connected in the first step, sincea metallic bond is easily formed after the second step and the biting ofthe adhesive for a semiconductor is reduced, favorable connectivity isparticularly easily obtainable.

In order to contact the metals of the connection portions between thesemiconductor chip 1 and the substrate 2 or form a metallic bond whileremoving voids at the time of the temporary press-bonding (first step),the load can be increased. When the load is large, voids are easilyremoved and the metals of the connection portions are easily contacted.The load may be, for example, 0.009 N to 0.3 N per 1 pin (1 bump) of thesemiconductor chip.

The temporary press-bonding (first step) may be performed in a shorttime from the viewpoint of an improvement in productivity. For example,the time for the temporary press-bonding may be 5 seconds or shorter,and from the viewpoint of an improvement in productivity, may be 3seconds or shorter or 2 seconds or shorter.

The temperature of the temporary press-bonding (first step) (thetemperature of the press-bonding apparatus) may be set to be low inorder not to transfer heat when the semiconductor chip (attached withthe adhesive for a semiconductor) is picked up by the press-bondingtool. By setting the temperature of the temporary press-bonding (firststep) (the temperature of the press-bonding apparatus), flowability ofthe adhesive for a semiconductor can be enhanced such that voids at thetime of entrainment can be removed. The temperature of the temporarypress-bonding (first step) (the temperature of the press-bondingapparatus) may be a temperature lower than the reaction initiationtemperature of the adhesive for a semiconductor. In order to shorten thecooling time, a difference between the temperature when thesemiconductor chip is picked up by the press-bonding tool and thetemperature when the semiconductor chips or the semiconductor chip andthe substrate contact to each other (at the time of the temporarypress-bonding) may be small. This temperature difference may be 100° C.or lower or 60° C. or lower, and may be constant (the same settemperature). When the temperature difference is 100° C. or lower, thetime for cooling the press-bonding tool is shortened and thusproductivity is further improved. The reaction initiation temperature isan on-set temperature in differential scanning calorimetry using DSC(manufactured by PerkinElmer Co., Ltd., DSC-Pyirs 1) under theconditions including a sample amount of 10 mg, a temperature increasingrate of 10° C./min, and a measurement atmosphere of air or nitrogenatmosphere.

Regarding the heating temperature in the main press-bonding (secondstep), a temperature equal to or higher than a melting point of solderneeds to be applied to the package. For example, in a case where themetal of the connection portion is solder, the heating temperature ispreferably 230° C. or higher and 330° C. or lower. When the heatingtemperature is low, the metal of the connection portion is not meltedand thus a sufficient metallic bond is not formed. When the heatingtemperature is high, voids are likely to be generated and the solder islikely to be scattered.

The heating temperature in the main press-bonding (main connection step,second step) may be a temperature higher than the reaction initiationtemperature of the adhesive for a semiconductor such that the curing ofthe adhesive for a semiconductor is promoted as well as the formation ofthe metallic bond. When the curing of the adhesive for a semiconductoris promoted during the main connection step, further void generation andfailed connection can be particularly effectively suppressed.

The heating of the main press-bonding (second step) is not particularlylimited, but for example, can be performed by using a heating apparatussuch as a reflow furnace, an oven, or a hot plate. Examples of theheating apparatus include a reflow furnace (manufactured by TAMURACORPORATION) and a clean oven (manufactured by ESPEC CORP.).

In the main press-bonding (second step), in the case of a chip-chipconnection, a chip-substrate connection, a chip-wafer connection, awafer-wafer connection, or the like, a weight may be placed thereon orthese may be pinched by a clip. According to this, the warpage andfailed connection generated by a difference in thermal expansion betweenthe semiconductor chips or between the semiconductor chip and theadhesive for a semiconductor can be more effectively suppressed.

In the case of performing the main connection step (second step) byusing a press-bonding machine, heat of the press-bonding machine is lesslikely to be transferred to the fillet that is the adhesive for asemiconductor protruding on the chip side surface at the time ofpress-bonding. For this reason, the heating treatment for sufficientlycuring the adhesive for a semiconductor of the fillet portion or thelike may be necessary after the second step. On the other hand, in thecase of performing heating of the main press-bonding (second step) byusing a heating furnace such as a reflow furnace or an oven, a hotplate, or the like, heat is applied to the whole body to be heated andthus the heating treatment after the second step can be shortened oromitted.

In the temporary press-bonding (first step), the plurality of chips maybe collectively press-bonded. In the stack press-bonding that is oftenseen in a package having a TSV structure, a plurality of chips arepress-bonded in a stereoscopic manner. In this case, after the firststep in which a plurality of semiconductor chips are stacked one by oneand temporarily press-bonded, the plurality of chips are mainlypress-bonded collectively in the second step.

EXAMPLE

Hereinafter, the present invention will be described in more detail bymeans of Examples. However, the present invention is not limited to thefollowing Examples.

1. Examination Example Mainly Related to First Embodiment

1-1. Preparation of Adhesive Film

Compounds used in preparation of adhesive films are described below.

(a) Thermosetting Resin

Acrylic Resin

Ethoxylated isocyanuric acid triacrylate (manufactured by Shin NakamuraChemical Co., Ltd., A-9300)

Acrylate compound having a fluorene skeleton (manufactured by Osaka GasChemicals Co., Ltd., EA0200, the number of functional groups of theacryloyl group: 2)

Epoxy Resin

Polyfunctional solid epoxy resin having a triphenol methane skeleton(manufactured by Japan Epoxy Resin Co., Ltd., EP1032H60)

Bisphenol F type liquid epoxy resin (manufactured by Japan Epoxy ResinCo., Ltd., YL983U)

(b) Curing Agent

Dicumyl peroxide (manufactured by NOF CORPORATION, PERCUMYL D)

2,4-Diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuricacid adduct (manufactured by SHIKOKU CHEMICALS CORPORATION, 2MAOK-PW)

(c) Polymer Component

Phenoxy resin (manufactured by TOHTO Chemical Industry Co., Ltd.,ZX1356, Tg: about 71° C., weight average molecular weight: about 63000)

Acrylic rubber (manufactured by Hitachi Chemical Company, Ltd., KH-C865,Tg: 0 to 12° C., weight average molecular weight: 450000 to 650000)

(d) Filler

Inorganic Filler

Silica filler (manufactured by Admatechs Company Limited, SE2050,average particle size: 0.5 μm)

Silica filler surface-treated with epoxysilane (manufactured byAdmatechs Company Limited, SE2050SEJ, average particle size: 0.5 μm)

Methacrylic-surface-treated nano silica filler (manufactured byAdmatechs Company Limited, YA050CSM,

hereinafter, referred to as “SM nano silica,” average particle size:about 50 nm)

Resin Filler

Organic filler (manufactured by ROHM AND HAAS JAPAN K. K., EXL-2655:core-shell type organic fine particle)

(e) Fluxing Agent (Carboxylic Acid)

2-Methylglutaric acid (manufactured by Sigma-Aldrich, Inc., meltingpoint: about 77° C., hereinafter, referred to as “glutaric acid”)

Production Example 1-1

An acrylic resin (A9300), an inorganic filler (SE2050, SE2050SEJ, and SMnano silica), and a resin filler (EXL2655) at the blended amountspresented in Table 1 (unit: part by mass) were added to methyl ethylketone as a solvent such that the concentration of non-volatile content(solid content, components other than the solvent) became 60% by mass.Then, beads (Φ1.0 mm and Φ2.0 mm) were added in an amount equal to thetotal amount of the acrylic resin and the inorganic filler that wereadded to methyl ethyl ketone, and the mixture was stirred with a beadmill (manufactured by Fritsch Japan Co., Ltd., planetary pulverizingmill P-7) for 30 minutes. Thereafter, a phenoxy resin (ZX1356) was addedas a polymer component, and the mixture was stirred again with the beadmill for 30 minutes. After stirring, a curing agent (PERCUMYL D) wasadded, the mixture was stirred, and the beads were removed by filtrationto obtain varnish. The obtained varnish was applied with a compactprecision coating apparatus (manufactured by Yasui Seiki Company, Ltd.)and the coating film was dried in a clean oven (manufactured by ESPECCORP.) (70° C./10 min) to obtain an adhesive film.

Production Examples 1-2 and 1-3

Adhesive films were obtained in the same manner as in Production Example1-1, except that the used materials were changed as presented inTable 1. A fluxing agent was added at the same time of adding athermosetting resin.

TABLE 1 Production Example Raw material 1-1 1-2 1-3 ThermosettingAcrylic resin A9300 60 — — resin EA0200 — 60 — Epoxy resin EP1032H60 — —45 YL983U — — 15 Curing agent PERCUMYL D 2 2 — 2MAOK-PW — — 6 Polymercomponent ZX1356 60 — 30 KH-C865 — 30 — Filler Inorganic SE2050 15 15 15filler SE2050SEJ 15 15 15 SM nano silica 80 80 45 Resin filler EXL-265510 10 10 Fluxing agent Glutaric acid — — 4

1-2. Manufacturing of Semiconductor Device

Example 1-1

Two pressing members I and II each having a stage and a press-bondinghead facing each other (FCB3, manufactured by Panasonic Corporation)were prepared, and a semiconductor device was manufactured according tothe following procedures by using the pressing member I as the memberfor temporary press-bonding and the pressing member II as the pressingmember for main press-bonding.

The adhesive film produced in Production Example 1-1 was cut into a sizeof 8 mm×8 mm×0.045 mmt and was bonded onto a semiconductor chip (chipsize: 10 mm×10 mm×0.4 mmt, metal of connection portion: Au, productname: WALTS-TEG IP80, manufactured by WALTS CO., LTD.). Subsequently,the semiconductor chip attached with the adhesive film was fed onto astage of the pressing member I as the pressing member for temporarypress-bonding. The semiconductor chip on the stage and a semiconductorchip with solder bumps (chip size: 7.3 mm×7.3 mm×0.15 mmt, metal ofconnection portion: copper pillar+solder, bump height: about 45 μm(total of copper pillar+solder), the number of bumps: 1048 pins, pitchof 80 μm, product name: WALTS-TEG CC80, manufactured by WALTS CO., LTD.)were aligned such that the respective connection portions faced to eachother. Thereafter, a laminate including the semiconductor chip, theadhesive film, and the semiconductor chip was interposed between thepress-bonding head and the stage and then pressured and heated tothereby temporarily press-bond the semiconductor chips to each other.Subsequently, the temporarily press-bonded laminate was heated andpressured by interposing the laminate with the pressing member II as thepressing member for main press-bonding to thereby electrically connectthe semiconductor chips to each other.

The temporary press-bonding condition and the main press-bondingcondition are described as follows. These conditions were set such thatthe evaluation of voids and the evaluation of connection of asemiconductor device to be obtained became “A.”

Temporary Press-Bonding Condition

Temperature of press-bonding head: 80° C., load: 75 N, stagetemperature: 80° C.

Main Press-Bonding Condition

Temperature of press-bonding head: 280° C., load: 75 N, stagetemperature: 80° C.

A plurality of semiconductor devices were continuously manufacturedwhile two pressing members I and II were operated in parallel at thesame time. The results of the manufacturing time required for thetemporary press-bonding and the main press-bonding, the manufacturingtime per one semiconductor device package (PKG), and the unit per hour(UPH) of the semiconductor device are presented in Table 2.

1-3. Evaluation

(1) Evaluation of Voids

An image of the appearance of the fabricated semiconductor device wastaken with an ultrasonic image diagnostic apparatus (Insight-300,manufactured by Insight k.k.) and an image of the adhesive layer on thesemiconductor chip was taken with a scanner GT-9300UF (manufactured bySeiko Epson Corporation). The image was subjected to color tonecorrection and black and white conversion with an image processingsoftware Adobe Photoshop (registered trademark) to distinguish voidportions, and the proportion of the void portions in the adhesive layerwas calculated based on a histogram. The area of the adhesive layer onthe semiconductor chip was regarded as 100%. A case where the areaoccupied by voids is 10% or less was determined as “A,” and a case wherethe area occupied by voids is more than 10% was determined as “B.”

(2) Evaluation of Connection

The connection resistance value of the prepared semiconductor device wasmeasured with a multimeter (manufactured by ADVANTEST CORPORATION, tradename “R6871E”) to evaluate initial conduction after mounting. A casewhere the initial connection resistance value of the inner circumferenceof the peripheral portion is 45Ω or less and the initial connectionresistance value of the outer circumference is 85Ω or less was regardedas “A,” and all of a case where the initial connection resistance valueof the inner circumference is more than 45Ω, a case where the initialconnection resistance value of the outer circumference is more than 85Ω,and a case where conduction does not occur (resistance value notindicated) were regarded as “B.”

Comparative Example 1-1

A plurality of semiconductor devices were manufactured using theadhesive film of Production Example 1 according to the followingprocedure while two pressing members I and II were operated in parallelat the same time under the same press-bonding condition.

The semiconductor chip and the semiconductor chip with bumps werealigned on each stage of the pressing members I and II. Thereafter,while pressuring was performed by the press-bonding head and the stageof the pressing member, the temperature of the press-bonding head wasincreased to 280° C. for 1 second and then this state was held for 2seconds. Accordingly, the semiconductor chip and the semiconductor chipwith bumps were press-bonded to each other and electrically connected.The total time for press-bonding was 3 seconds. Thereafter, thetemperature of the press-bonding head was cooled from 280° C. to 80° C.of the feed temperature of the semiconductor chip. The press-bondingconditions were set such that the evaluation of voids and the evaluationof connection of a semiconductor device became “A.”

The results of the manufacturing time required for each stage, themanufacturing time per one semiconductor device package (PKG), and theunit per hour (UPH) of the semiconductor package are presented in Table2.

TABLE 2 Example 1-1 Comparative Example 1-1 Manu- Manu- facturingfacturing time time Item [s] Item [s] Pressing Feeding 3 Feeding 2member I semiconductor semiconductor chip to chip to pressing pressingmember member → Alignment → Alignment Press- 3 → Temporary bondingpress-bonding Cooling 15 pressing member Total 3 Total 20 Pressing Main3 Feeding 2 member II press-bonding semiconductor chip to pressingmember → Alignment Press-bonding 3 Cooling 15 pressing member Total 3Total 20 Manufacturing 3 10 time [s] per 1 PKG UPH 1200 360 [PKG]

Example 1-2

A semiconductor device was manufactured in the same manner as in Example1, except that the adhesive film of Production Example 1-2 was used. Theresults are presented in Table 3.

Comparative Example 1-2

A semiconductor device was manufactured in the same manner as inComparative Example 1, except that the adhesive film of ProductionExample 1-2 was used. The results are presented in Table 3.

TABLE 3 Example 1-2 Comparative Example 1-2 Manu- Manu- facturingfacturing Item time [s] Item time [s] Pressing Feeding 3 Feeding 2member I semiconductor semiconductor chip to pressing chip to memberpressing → Alignment member → Temporary → Alignment press-bondingPress-bonding 3 Cooling 15 pressing member Total 3 Total 20 PressingMain 3 Feeding 2 member II press-bonding semiconductor chip to pressingmember → Alignment Press-bonding 3 Cooling 15 pressing member Total 3Total 20 Manufacturing 3 10 time [s] per 1 PKG UPH 1200 360 [PKG]

Example 1-3

A semiconductor device was manufactured in the same manner as in Example1, except that the adhesive film of Production Example 1-3 was used. Theresults are presented in Table 4.

Comparative Example 1-3

A semiconductor device was manufactured in the same manner as inComparative Example 1, except that the adhesive film of ProductionExample 1-3 was used, the temperature of the press-bonding head wasincreased to 280° C. for 1 second and then held for 4 seconds, and thetotal time for press-bonding was 5 seconds. The results are presented inTable 4.

TABLE 4 Example 1-3 Comparative Example 1-3 Manu- Manu- facturingfacturing time time Item [s] Item [s] Pressing Feeding 5 Feeding 2member I semiconductor semiconductor chip to chip to pressing pressingmember member → Alignment → Alignment → Temporary Press-bonding 5press-bonding Cooling 15 pressing member Total 5 Total 22 Pressing Main5 Feeding 2 member II press-bonding semiconductor chip to pressingmember → Alignment Press-bonding 5 Cooling 15 pressing member Total 5Total 22 Manufacturing 5 11 time [s] per 1 PKG UPH 720 327 [PKG]

As clearly seen from the results of Tables 2 to 4, according to themethod related to the present embodiment, it is possible to shorten themanufacturing time of the semiconductor device and to increase the unitper hour (UPH) of the semiconductor device.

2. Examination Example Mainly Related to First Embodiment

2-1. Preparation of Adhesive Film

Compounds used in preparation of an adhesive film are described below.

(a) Thermosetting Resin

Acrylic Resin

Acrylate having a skeleton derived from fluorene (manufactured by OsakaGas Chemicals Co., Ltd., EA0200, the number of acryloyl groups: 2)

(b) Curing Agent

Dicumyl peroxide (manufactured by NOF CORPORATION, PERCUMYL D)

(c) Polymer Component

Acrylic rubber (manufactured by Hitachi Chemical Company, Ltd., KH-C865,Tg: 0 to 12° C., weight average molecular weight: 450000 to 650000)

(d) Filler Inorganic Filler

Silica filler (manufactured by Admatechs Company Limited, SE2050,average particle size: 0.5 μm)

Silica filler surface-treated with epoxysilane (manufactured byAdmatechs Company Limited, SE2050SEJ, average particle size: 0.5 μm)

Methacrylic-surface-treated nano silica filler (manufactured byAdmatechs Company Limited, YA050CSM,

hereinafter, referred to as “SM nano silica,” average particle size:about 50 nm)

Resin Filler

Organic filler (manufactured by ROHM AND HAAS JAPAN K. K., EXL-2655:core-shell type organic fine particle)

Production Example 2-1

An acrylic resin (A9300), an inorganic filler (SE2050, SE2050SEJ, and SMnano silica), and a resin filler (EXL2655) at the blended amountpresented in Table 5 (unit: part by mass) were added to methyl ethylketone as a solvent such that the concentration of non-volatile content(solid content, components other than the solvent) became 60% by mass.Then, beads (Φ1.0 mm and Φ2.0 mm) were added in an amount equal to thesolid content, and the mixture was stirred with a bead mill(manufactured by Fritsch Japan Co., Ltd., planetary pulverizing millP-7) for 30 minutes. Thereafter, a phenoxy resin (ZX1356) was added as apolymer component, and the mixture was stirred again with the bead millfor 30 minutes. After stirring, a curing agent (PERCUMYL D) was added,the mixture was stirred, and the beads were removed by filtration toobtain varnish. The obtained varnish was applied with a compactprecision coating apparatus (manufactured by Yasui Seiki Company, Ltd.)and the coating film was dried in a clean oven (manufactured by ESPECCORP.) (70° C./10 min) to obtain an adhesive film.

TABLE 5 Production Raw material Example 2-1 Thermosetting Acrylic resinEA0200 60 resin Curing agent PERCUMYL D 2 Polymer component KH-C865 30Filler Inorganic filler SE2050 15 SE2050SEJ 15 SM nano silica 85 Resinfiller EXL-2655 10

The melt viscosity of the obtained adhesive film at the temperature atthe time of the temporary press-bonding step was measured by thefollowing method.

Measurement of Melt Viscosity

The melt viscosity at the temperature (° C.) of the press-bonding headat the time of the temporary press-bonding presented in Table 6 wasmeasured with a rheometer (manufactured by Anton Paar Japan K.K.,MCR301) by using a measurement jig (a disposable plate (diameter: 8 mm)and a disposable sample dish) under the conditions including a samplethickness of 400 μm, a temperature increasing rate of 10° C./min, andfrequency of 1 Hz. The results are presented in Table 6.

2-2. Manufacturing of Semiconductor Device

Example 2-1

Two pressing members I and II each having a stage and a press-bondinghead facing each other (FCB3, manufactured by Panasonic Corporation)were prepared, and a semiconductor device was manufactured according tothe following procedures by using the pressing member I as the memberfor temporary press-bonding and the pressing member II as the pressingmember for main press-bonding.

The adhesive film produced in Production Example 2-1 was cut into a sizeof 8 mm×8 mm×0.045 mmt and was bonded onto a semiconductor chip (chipsize: 10 mm×10 mm×0.4 mmt, metal of connection portion: Au, productname: WALTS-TEG IP80, manufactured by WALTS CO., LTD.). Subsequently,the semiconductor chip attached with the adhesive film was fed onto astage of the pressing member I as the pressing member for temporarypress-bonding. The semiconductor chip on the stage and a semiconductorchip with solder bumps (chip size: 7.3 mm×7.3 mm×0.15 mmt, metal ofconnection portion: copper pillar+solder, bump height: about 45 μm(total of copper pillar+solder), the number of bumps: 1048 pins, pitchof 80 μm, product name: WALTS-TEG CC80, manufactured by WALTS CO., LTD.)were aligned such that the respective connection portions faced to eachother. Thereafter, a laminate including the semiconductor chip, theadhesive film, and the semiconductor chip was interposed between thepress-bonding head and the stage and then pressured and heated tothereby temporarily press-bond the semiconductor chips to each othersuch that the connection portions were contacted to each other.Subsequently, the temporarily press-bonded laminate was heated andpressured by being interposed with the pressing member II as thepressing member for main press-bonding to thereby electrically connectthe semiconductor chips to each other. The temporary press-bondingcondition and the main press-bonding condition are presented as in Table6. In both the temporary press-bonding and the main press-bonding, thestage temperature was 80° C. and the press-bonding time was 2 seconds.

Examples 2-2 to 2-8

Semiconductor devices of Examples 2-2 to 2-8 were manufactured in thesame manner as in Example 2-1, except that the temperature of thepress-bonding head and the load in the temporary press-bonding step andthe main press-bonding step were changed as presented in Table 2.

2-3. Evaluation

The evaluation of voids and the evaluation of connection of the obtainedsemiconductor devices were conducted.

Evaluation of Voids

An image of the appearance of the obtained semiconductor device wastaken with an ultrasonic image diagnostic apparatus (Insight-300,manufactured by Insight k.k.) and an image of the adhesive layer on thesemiconductor chip was taken with a scanner GT-9300UF (manufactured bySeiko Epson Corporation). The image was subjected to color tonecorrection and black and white conversion with an image processingsoftware Adobe Photoshop (registered trademark) to distinguish voidportions, and the proportion of the void portions in the adhesive layerwas calculated based on a histogram. The area of the adhesive layer onthe semiconductor chip was regarded as 100%. A case where the areaoccupied by voids is 5% or less was evaluated as “A,” and a case wherethe area occupied by voids is more than 5% was evaluated as “B.” Theresults are presented in Table 6.

Evaluation of Connection

The connection resistance value of the prepared semiconductor device wasmeasured with a multimeter (manufactured by ADVANTEST CORPORATION, tradename “R6871E”) to evaluate conduction after the temporary press-bondingstep and after the main press-bonding step. Regarding cases after thetemporary press-bonding step, the case of conduction at the peripheralportion (resistance value indicated) was regarded as “A,” and the caseof no conduction (resistance value not indicated) were regarded as “B.”Regarding cases after the main press-bonding step, a case where theinitial connection resistance value of the inner circumference of theperipheral portion is 45Ω or less and the initial connection resistancevalue of the outer circumference is 85Ω or less was regarded as “A,” andall of a case where the initial connection resistance value of the innercircumference is more than 45Ω, a case where the initial connectionresistance value of the outer circumference is more than 85Ω, and a casewhere conduction does not occur (resistance value not indicated) wereregarded as “B.” The results are presented in Table 6.

TABLE 6 Example 2-1 2-2 2-3 2-4 2-5 2-6 2-7 2-8 Packaging Temporary Load[N] 100 100 75 100 100 75 100 100 condition press- Press-bonding head100 100 130 130 130 80 80 80 bonding temperature [° C.] step ConnectionLoad [N] 75 75 75 75 75 75 75 75 step Press-bonding head 240 260 260 240260 260 240 260 temperature [° C.] Evaluation Adhesive film Meltviscosity [Pa · s] 6730 6730 4830 4830 4830 11200 11200 11200 AfterConnectivity A A A A A B B B temporary press- bonding step After Void AA A A A B B B heating Connectivity A A A A A B B B step

From the comparison of Examples 2-1 to 2-5 and Examples 2-6 to 2-8 inTable 6, it was confirmed that the fact that the melt viscosity of theadhesive layer is 7000 Pa·s or less at the temperature of thepress-bonding head at the time of the temporary press-bonding stepcontributes to suppression of generation of voids and improvement inreliability of the semiconductor device.

3. Examination Example Mainly Related to Second Embodiment

3-1. Raw Material

A sheet for collective connection used in Examples is described below.

NITOFLON 900UL (Nitto Denko Corporation, thickness: 50 μm, 100 μm)

UPILEX SGA (Ube Industries, Ltd., 50 μm, 100 μm (50 μm×2))

Aluminum foil (Sumikei Aluminum Foil Co., Ltd., 100 μm (20 μm×5))

Compounds used in Examples are described below.

(a) Thermosetting Resin

Epoxy Resin

Polyfunctional solid epoxy resin having a triphenol methane skeleton(EP1032H60, Japan Epoxy Resin Co., Ltd., weight average molecularweight: 800 to 2000)

Bisphenol F type liquid epoxy resin (YL983U, Japan Epoxy Resin Co.,Ltd., molecular weight: about 336)

Flexible semisolid epoxy resin (YL7175-1000, Japan Epoxy Resin Co.,Ltd., weight average molecular weight: 1000 to 5000)

Acrylic Resin

Acrylate resin having a fluorene skeleton (EA0200, Osaka Gas ChemicalsCo., Ltd., two functional groups, molecular weight: about 546)

(b) Curing Agent

2,4-Diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuricacid adduct (2MAOK-PW, manufactured by SHIKOKU CHEMICALS CORPORATION)

Dicumyl peroxide (PERCUMYL D, NOF CORPORATION)

(c) Polymer Component

Phenoxy resin (ZX1356-2, TOHTO Chemical Industry Co., Ltd., Tg: about71° C., weight average molecular weight: about 63000)

Acrylic rubber (KH-C865, manufactured by Hitachi Chemical Co., Ltd., Tg:0 to 12° C., weight average molecular weight: 450000 to 650000)

(d) Filler

Resin Filler

Organic filler (EXL-2655, ROHM AND HAAS JAPAN K. K., core-shell typeorganic fine particle)

Inorganic Filler

Silica filler (SE2050, Admatechs Company Limited, average particle size:0.5 μm)

Methacrylic-surface-treated nano silica filler (YA050C-SM, AdmatechsCompany Limited, average particle size: about 50 nm)

(e) Fluxing Agent

2-Methylglutaric acid (Sigma-Aldrich, Inc., melting point: about 77° C.)

Additive

3-Methacryloxypropyltrimethoxysilane (OFS6030, Dow Corning Toray Co.,Ltd.)

3-2. Preparation of Thermosetting Resin Composition

Various raw materials were mixed at the blending ratio presented inTable 7 to prepare thermosetting resin compositions A and B. Thespecific preparation method is described below. A thermosetting resin, afiller, and, as necessary, a fluxing agent were added to methyl ethylketone such that the concentration of non-volatile content (solidcontent) became 60% by mass. Thereafter, beads (Φ1.0 mm and (Φ2.0 mm)were added in an amount equal to the mass of solid content to the mixedsolution, and the mixture was stirred with a bead mill (manufactured byFritsch Japan Co., Ltd., planetary pulverizing mill P-7) for 30 minutes.A polymer component was added to the mixed solution, and the mixture wasstirred with a bead mill for 30 minutes. After stirring, a curing agentand, as necessary, an additive were added, the mixture was stirred, andthe mixed solution was filtrated to remove the beads to thereby obtain afiltrate as a thermosetting resin composition A or B.

TABLE 7 Thermosetting Thermosetting resin resin Raw material (parts bymass) composition A composition B Thermosetting EP1032H60 45 — resinYL983U 15 — YL7175-1000 5 — EA0200 — 65 Curing agent 2MAOK-PW 6 —PERCUMYL D — 1 Polymer ZX1356-2 30 — component KH-C865 — 30 Fluxingagent 2-Methylglutaric 4 — acid Filler EXL-2655 10 10 SE2050 30 30YA050C-SM 45 85 Additive OFS6030 — 2

3-3. Preparation of Adhesive Film

The prepared thermosetting resin composition A or B was applied with acompact precision coating apparatus (Yasui Seiki Company, Ltd.) anddried in a clean oven (manufactured by ESPEC CORP.) (70° C./10 min) toobtain an adhesive film.

3-4. Manufacturing of Semiconductor Device

An adhesive film having a size of 8 mm×8 mm×0.045 mmt was bonded to asemiconductor chip (10 mm, 0.4 mm thick, metal of connection portion:Au, product name: WALTS-TEG IP80, manufactured by WALTS CO., LTD.). Thissemiconductor chip attached with the adhesion film was contacted to asemiconductor chip with solder bumps (chip size: 7.3 mm×7.3 mm×0.15 mmt,bump height: about 45 μm (total of copper pillar+solder), the number ofbumps: 1048 pins, pitch of 80 μm, product name: WALTS-TEG CC80,manufactured by WALTS CO., LTD.) through the adhesion film, and theresultant product was temporarily press-bonded by FCB3 (manufactured byPanasonic Corporation, press-bonding head area: 7.3 mm×7.3 mm) tothereby prepare a laminate. The laminate using the thermosetting resincomposition A was temporarily press-bonded by being heated and pressuredat a pressure of 50 N for 3 seconds while the temperature of thepress-bonding head of FCB3 was set to 130° C. The laminate using thethermosetting resin composition B was temporarily press-bonded by beingheated and pressured at a pressure of 100 N for 3 seconds while thetemperature of the press-bonding head of FCB3 was set to 130° C. Ninelaminates that were temporarily press-bonded were prepared and the ninelaminates were placed on a stage of a collective connection apparatus(manufactured by ALPHA DESIGN CO., LTD., HTB-MM) in which the area ofthe press-bonding head is 100 mm×100 mm. After placement, the laminateswere covered with a sheet for collective connection (100 mm×100 mm) andwas mainly press-bonded collectively to thereby obtain semiconductordevices. The main press-bonding was performed by performing heating andpressuring at a pressure of 900 N (100 N per laminate) for 5 secondswhile the temperature of the stage was set to 80° C. and the temperatureof the press-bonding head was set to 250° C.

3-5. Evaluation

Storage Elastic Modulus at 250° C. of Sheet for Collective Connection

The viscoelasticity of a test piece cut from the sheet for collectiveconnection and having a width of 4 mm and a length of 40 mm was measuredby using an elastic modulus measurement apparatus RSA2 (RheometricScientific, Inc.) while the temperature was increased from −30° C. to300° C. under the conditions including a frequency of 10 Hz and atemperature increasing rate of 5° C./min. The storage elastic modulus at250° C. was obtained from the measurement result.

Measurement of Displacement at 250° C. of Sheet for CollectiveConnection

The displacement at 250° C. of the sheet for collective connection wasmeasured by using an electromechanical universal testing machine(manufactured by INSTRON, 5900 series) and Bluehill 3 software. Acompression test was conducted in such a manner that the sheet forcollective connection is placed in an chamber set to 250° C., arod-shaped pressing jig having a cylindrical end face with a diameter of8 μm was used, and the jig was pressed in a direction in which theprincipal surface of the sheet for collective connection and the endface of the jig are parallel to each other. A load of 100 N (about 2MPa) was applied at a speed of 0.001 mm/sec to the sheet for collectiveconnection by the pressing jig. The displacement at the time point whenthe load is stabilized to 100 N after 5 seconds from the time point whenthe compressive load becomes 100 N from 0 N was recorded as thedisplacement of the film thickness of the sheet for collectiveconnection.

Evaluation of Connection

Whether or not the semiconductor device is initially conducted wasmeasured by using a multimeter (manufactured by ADVANTEST CORPORATION,R6871E) after the main press-bonding. A semiconductor device in whichthe initial connection resistance value of the inner circumference ofthe peripheral portion is 40Ω or less and the initial connectionresistance value of the outer circumference is 85Ω or less was regardedas “OK,” and a semiconductor device in which the resistance value ismore than the above values or which is not connected was regarded as“NG.” A case where the number of semiconductor devices evaluated as “OK”among nine semiconductor devices is nine, that is, all semiconductordevices are evaluated as “OK” was determined “A” for comprehensiveevaluation and a case other than the above case are evaluated as “B.”

The results of collectively manufacturing semiconductor devices by usingthe thermosetting resin composition A and various sheets for collectiveconnection are presented in Table 8.

TABLE 8 Ref. Ref. Ref. Item Ex. 3-1 Ex. 3-1 Ex. 3-2 Ex. 3-2 Ex. 3-3Thermosetting resin A A A A A composition Sheet for Type NITOFLONNITOFLON UPILEX UPILEX Aluminum collective 900 UL 900 UL SGA SGA foilconnection Thickness 50 100 50 100 100 Storage elastic modulus 0.07 0.076 6 39 at 250° C. (GPa) Displacement at 38 44 38 42 35 250° C. (μm)Connection B A B A B evaluation (2/9 OK) (2/9 OK) (1/9 OK)

The results of collectively manufacturing semiconductor devices by usingthe thermosetting resin composition B and various sheets for collectiveconnection are presented in Table 9.

TABLE 9 Ref. Ref. Ref. Item Ex. 3-4 Ex. 3-3 Ex. 3-5 Ex. 3-4 Ex. 3-6Thermosetting resin B B B B B composition Sheet for Type NITOFLONNITOFLON UPILEX UPILEX Aluminum collective 900 UL 900 UL SGA SGA foilconnection Thickness 50 100 50 100 100 Storage elastic modulus 0.07 0.076 6 39 at 250° C. (GPa) Displacement at 38 44 38 42 35 250° C. (μm)Connection B A B A B evaluation (4/9 OK) (5/9 OK) (2/9 OK)

From the results of Tables 8 and 9, it was confirmed that in a casewhere the plurality of semiconductor chips and the plurality of othersemiconductor chips are mainly press-bonded collectively, by using thesheet for collective connection having a storage elastic modulus at 250°C. of 10 GPa or less and a displacement at 250° C. of 40 μm or more, asemiconductor device with favorable connection can be more efficientlymanufactured.

4. Examination Example Mainly Related to Third Embodiment

4-1. Preparation of Adhesive Film

Compounds used in preparation of an adhesive film are described below.

(a) Thermosetting Resin

Acrylic Resin

Ethoxylated isocyanuric acid triacrylate (manufactured by Shin NakamuraChemical Co., Ltd., A-9300, the number of functional groups of acryloylgroup: 3)

Acrylate compound having a skeleton derived from fluorene (manufacturedby Osaka Gas Chemicals Co., Ltd., EA0200, the number of functionalgroups of acryloyl group: 2)

(b) Curing Agent

Dicumyl peroxide (manufactured by NOF CORPORATION, PERCUMYL D)

(c) Polymer Component

Phenoxy resin (manufactured by TOHTO Chemical Industry Co., Ltd.,ZX1356, Tg: about 71° C., weight average molecular weight: about 63000)

Acrylic rubber (manufactured by Hitachi Chemical Company, Ltd., KH-C865,Tg: 0 to 12° C., weight average molecular weight: 450000 to 650000)

(d) Filler

Inorganic Filler

Silica filler (manufactured by Admatechs Company Limited, SE2050,average particle size: 0.5 μm)

Silica filler surface-treated with epoxysilane (manufactured byAdmatechs Company Limited, SE2050SEJ, average particle size: 0.5 μm)

Methacrylic-surface-treated nano silica filler (manufactured byAdmatechs Company Limited, YA050CSM

hereinafter, referred to as “SM nano silica,” average particle size:about 50 nm)

Resin Filler

Organic filler (manufactured by ROHM AND HAAS JAPAN K. K., EXL-2655:core-shell type organic fine particle)

Production Example 4-1

An acrylic resin (A9300), an inorganic filler (SE2050, SE2050SEJ, and SMnano silica), and a resin filler (EXL2655) at the blended amountspresented in Table 1 (unit: part by mass) were added to methyl ethylketone as a solvent such that the concentration of non-volatile content(solid content, components other than the solvent) became 60% by mass.Then, beads (Φ1.0 mm and Φ2.0 mm) were added in an amount equal to thetotal amount of the acrylic resin and the inorganic filler that wereadded to methyl ethyl ketone, and the mixture was stirred with a beadmill (manufactured by Fritsch Japan Co., Ltd., planetary pulverizingmill P-7) for 30 minutes. Thereafter, a phenoxy resin (ZX1356) was addedas a polymer component, and the mixture was stirred again with the beadmill for 30 minutes. After stirring, a curing agent (PERCUMYL D) wasadded, the mixture was stirred, and the beads were removed by filtrationto obtain varnish. The obtained varnish was applied with a compactprecision coating apparatus (manufactured by Yasui Seiki Company, Ltd.)and the coating film was dried in a clean oven (manufactured by ESPECCORP.) (70° C./10 min) to obtain an adhesive film.

Production Example 4-2

An adhesive film was obtained in the same manner as in ProductionExample 4-1, except that the used materials were changed as presented inTable 10.

TABLE 10 Production Example Raw material 4-1 4-2 Thermosetting Acrylicresin A9300 60 — resin EA0200 — 60 Curing agent PERCUMYL D 2 2 Polymercomponent ZX1356 60 — KH-C865 — 30 Filler Inorganic SE2050 15 15 fillerSE2050SEJ 15 15 SM nano silica 80 80 Resin filler EXL-2655 10 10

4-2. Manufacturing of Semiconductor Device

Example 4-1

The adhesive film produced in Production Example 4-1 was cut into a sizeof 8 mm×8 mm×0.045 mmt and was bonded onto a semiconductor chip (chipsize: 10 mm×10 mm×0.4 mmt, metal of connection portion: Au, productname: WALTS-TEG IP80, manufactured by WALTS CO., LTD.). Subsequently,the semiconductor chip attached with the adhesive film was fed onto astage of a pressing member prepared as the pressing member for temporarypress-bonding. The semiconductor chip on the stage and a semiconductorchip with solder bumps (chip size: 7.3 mm×7.3 mm×0.15 mmt, metal ofconnection portion: copper pillar+solder, bump height: about 45 μm(total of copper pillar+solder), the number of bumps: 1048 pins, pitchof 80 μm, product name: WALTS-TEG CC80, manufactured by WALTS CO., LTD.)were aligned such that the respective connection portions faced to eachother. Thereafter, a laminate including the semiconductor chip, theadhesive film, and the semiconductor chip was interposed between thepress-bonding head and the stage and then pressured and heated tothereby temporarily press-bond the semiconductor chips to each other.

Subsequently, the obtained laminate was conveyed to a reflow furnace andheated for 600 seconds while the highest temperature is set to 260° C.to electrically connect the chip and the chip. A plurality of laminateswere formed in the temporary press-bonding step and collectivelyconveyed to the reflow furnace to manufacture a plurality ofsemiconductor devices at once.

In the manufacturing of the semiconductor device, the condition is setsuch that the following evaluation of connection becomes A. The resultsof the manufacturing time required for each of the temporarypress-bonding step and the heating step per one semiconductor devicepackage (PKG), and the manufacturing time per 100 semiconductor devicepackages (PKG) are presented in Table 11.

Temporary Press-Bonding Condition

Temperature of press-bonding head: 80° C., load: 75 N, stagetemperature: 80° C.

4-3. Evaluation

Evaluation of Connection

The connection resistance value of the prepared semiconductor device wasmeasured with a multimeter (manufactured by ADVANTEST CORPORATION, tradename “R6871E”) to evaluate initial conduction after packaging. A casewhere the initial connection resistance value of the inner circumferenceof the peripheral portion is 45Ω or less and the initial connectionresistance value of the outer circumference is 85Ω or less was regardedas “A,” and all of a case where the initial connection resistance valueof the inner circumference is more than 45Ω, a case where the initialconnection resistance value of the outer circumference is more than 85Ω,and a case where conduction does not occur (resistance value notindicated) were regarded as “B.”

Comparative Example 4-1

A semiconductor device was manufactured in the same manner as in Example4-1, except that the condition was changed in the following point. Thesemiconductor chip and a semiconductor chip with bumps were aligned on astage of a pressing member. Thereafter, while pressuring was performedby the press-bonding head and the stage of the pressing member, thetemperature of the press-bonding head was increased to 280° C. for 1second and then this state was held for 2 seconds. Accordingly, thesemiconductor chip and the semiconductor chip with bumps werepress-bonded and electrically connected. The total time forpress-bonding was 3 seconds. Thereafter, the temperature of thepress-bonding head was cooled from 280° C. to 80° C. of the feedtemperature of the semiconductor chip. A plurality of semiconductordevices were manufactured by using the pressing member. In themanufacturing of the semiconductor device, the condition was set suchthat the evaluation of connection became “A.” The results of themanufacturing time required for each stage of the press-bonding step andthe manufacturing time per 100 semiconductor device packages (PKG) arepresented in Table 11.

TABLE 11 Comparative Example Example 4-1 4-1 Manu- Manu- facturingfacturing Item time [s] Item time [s] Pressing Feeding 3 Feeding 2member semiconductor semiconductor (per 1 chip to chip to PKG) pressingpressing member member → Alignment → Alignment → Temporary Press-bonding3 press-bonding Cooling 15 pressing member Total 3 Total 20 HeatingHeating 600 apparatus laminate (per 100 Total 600 PKG) Manufacturing 9002000 time [s] per 100 PKG

Example 4-2

A semiconductor device was manufactured in the same manner as in Example4-1, except that an oven was used as the heating apparatus instead of areflow furnace and the laminate was heated in the oven set to 260° C.for 600 seconds. The results are presented in Table 12.

TABLE 12 Example 4-2 Manufacturing time Item [s] Pressing member Feeding3 (per 1 PKG) semiconductor chip to pressing member → Alignment →Temporary press-bonding Total 3 Heating apparatus Heating laminate 600(per 100 PKG) Total 600 Manufacturing time 900 [s] per 100 PKG

Example 4-3

A semiconductor device was manufactured in the same manner as in Example4-1, except that the adhesive film of Production Example 4-2 was used.The results are presented in Table 13.

Comparative Example 4-2

A semiconductor device was manufactured in the same manner as inComparative Example 4-1, except that the adhesive film of ProductionExample 4-2 was used. The results are presented in Table 13.

TABLE 13 Comparative Example Example 4-3 4-2 Manu- Manu- facturingfacturing Item time [s] Item time [s] Pressing Feeding 3 Feeding 2member semiconductor semiconductor (per 1 chip to chip to PKG) pressingpressing member member → Alignment → Alignment → Temporary Press-bonding3 press-bonding Cooling 15 pressing member Total 3 Total 20 HeatingHeating 600 apparatus laminate (per 100 Total 600 PKG) Manufacturing 9002000 time [s] per 100 PKG

Example 4-4

A semiconductor device was manufactured in the same manner as in Example4-3, except that an oven was used as the heating apparatus instead of areflow furnace and the laminate was heated in the oven set to 260° C.for 600 seconds. The results are presented in Table 14.

TABLE 14 Example 4-4 Manufacturing time Item [s] Pressing Feeding 3member (per 1 semiconductor chip to PKG) pressing member → Alignment →Temporary press-bonding Total 3 Heating Heating laminate 600 apparatus(per Total 600 100 PKG) Manufacturing 900 time [s] per 100 PKG

As clearly seen from the results of Tables 11 to 14, according to themethod for manufacturing a semiconductor device related to the presentembodiment, it is possible to shorten the manufacturing time of thesemiconductor device.

5. Examination Example Mainly Related to Third Embodiment

5-1. Raw Material

Compounds used in Examples are described below.

(i) Resin Component Having Weight Average Molecular Weight of Less than10000

Epoxy Resin

Polyfunctional solid epoxy resin having a triphenol methane skeleton(Japan Epoxy Resin Co., Ltd., EP1032H60, hereinafter, referred to as“EP1032”), weight average molecular weight: 800 to 2000

Bisphenol F type liquid epoxy resin (Japan Epoxy Resin Co., Ltd.,YL983U, hereinafter, referred to as “YL983”), weight average molecularweight: about 336

Flexible semisolid epoxy (Japan Epoxy Resin Co., Ltd., YL7175-1000,hereinafter, referred to as “YL7175”), weight average molecular weight:1000 to 5000

(ii) Curing Agent

2,4-Diamino-6-[2′-methylimidazolyl-(1)]-ethyl-s-triazine isocyanuricacid adduct (manufactured by SHIKOKU CHEMICALS CORPORATION, 2MAOK-PW,hereinafter, referred to as “2MAOK”)

(iii) Polymer Component Having Weight Average Molecular Weight of 10000or More

Phenoxy resin (TOHTO Chemical Industry Co., Ltd., ZX1356-2, Tg: about71° C., Mw: about 63000, hereinafter, referred to as “ZX1356”)

(iv) Fluxing Agent (Carboxylic Acid)

2-Methylglutaric acid (Sigma-Aldrich, Inc., melting point: about 77° C.,hereinafter, referred to as “glutaric acid”)

(v) Filler

Inorganic Filler

Silica filler (Admatechs Company Limited, SE2050, average particle size:0.5 μm)

Phenyl-surface-treated nano silica filler (Admatechs Company Limited,YA050C-SP, hereinafter, referred to as SP nano silica, average particlesize: about 50 nm)

Resin Filler

Organic filler (ROHM AND HAAS JAPAN K. K., EXL-2655: core-shell typeorganic fine particle)

(vi) Silicone Resin

A silicone resin having a basic structure represented by the followingchemical formula was prepared.R¹-R²—Si(OH)₃Silanol Compound

Solid silanol, R¹: phenyl group or propyl group, R²: alkylene group, X:H (manufactured by Dow Corning Toray Co., Ltd., RSN-6018, molecularweight: about 2000)

Solid silanol, R¹: phenyl group, R²: alkylene group, X: H (manufacturedby Dow Corning Toray Co., Ltd., FCA107, molecular weight: about 3000)

Other Silicone Resins

Liquid silicone resin, R¹: methyl group, R2: alkylene group, X: CH₃(manufactured by Dow Corning Toray Co., Ltd., SR2402, molecular weight:about 1500)

5-2. Preparation of Film Adhesive

Example 5-1

An organic solvent (methyl ethyl ketone) was added to an epoxy resin,2MAOK, 2-methylglutaric acid, an inorganic filler, a resin filler, andsilanol such that the non-volatile content (NV) became 60% by mass.Thereafter, beads (0.0 mm and 412.0 mm) were added in an amount equal tothe mass of solid content thereto, and the mixture was stirred with abead mill (manufactured by Fritsch Japan Co., Ltd., planetarypulverizing mill P-7) for 30 minutes. Thereafter, ZX1356 was addedthereto, and the mixture was stirred again with the bead mill for 30minutes. The beads used in stirring were removed by filtration. Theprepared varnish (adhesive for a semiconductor) was applied with acompact precision coating apparatus (manufactured by Yasui SeikiCompany, Ltd.) and the coating film was dried in a clean oven(manufactured by ESPEC CORP.) (70° C./10 min) to obtain a film adhesive.

Examples 5-2 to 5-4 and Reference Examples 5-1 to 5-3

Film adhesives were prepared in the same manner as the preparationmethod of the film adhesive of Example 5-1, except that the usedmaterials were changed as presented in Table 15. In Table 15, the amountof each material blended is the amount of non-volatile content blendedand the unit thereof is part(s) by mass.

5-3. Evaluation

(1) Evaluation of Thermal Weight Loss Amount

Into a Pt pan, about 10 mg of a silicone resin simple substance was put,and the thermal weight loss from 35° C. to 400° C. was measured with aTG/DTA measurement apparatus (manufactured by Seiko Instruments Inc.,EXSTAR6000). The temperature increasing rate was set to 10° C./min. Asample in which the thermal weight loss amount at 260° C. is 20% or lesswas evaluated as “A” and a sample in which the thermal weight lossamount at 260° C. is more than 20% was evaluated as “B.”

(2) Measurement of Viscosity

A rheometer MCR301 (manufactured by Anton Paar Japan K.K.) was used. Anadhesive for a semiconductor was fed onto a stage, and a measurement jigwas installed without voids entering. The measurement conditions wereset as follows: interval between the stage and the measurement jig (ϕ8mm): 0.3 mm, oscillation angle gamma=5%, frequency f=1 Hz, normal forceFN=0 μN, temperature increasing rate: 10° C./min, and measurement range:30° C. to 180° C. The viscosity at 130° C. (the temperature of the firststep in the following (3)) was obtained from the viscosity curve.

(3) Manufacturing of Semiconductor Device (Evaluation of Connection)

The produced film adhesive was cut into a size of 7.3 mm×7.3 mm×0.045mmt, bonded onto a semiconductor chip with solder bumps (chip size: 7.3mm×7.3 mm×0.15 mmt, bump height: about 45 μm (total of copperpillar+solder), the number of bumps: 1048, pitch of 80 μm, WALTS-TEGCC80 Model I, manufactured by WALTS CO., LTD.), and then temporarilypress-bonded to the receiving-side semiconductor chip (chip size: 10mm×10 mm×0.1 mmt, WALTS-TEG IP80, manufactured by WALTS CO., LTD.) byFCB3 (manufactured by Panasonic Corporation). The stage temperature wasset to 80° C. The semiconductor chips were aligned at 130° C./100 N/3 sand temporarily press-bonded (first step). The temporarily press-bondedlaminate was mainly press-bonded by being allowed to pass through areflow furnace (manufactured by TAMURA CORPORATION) which reached thehighest temperature of 260° C. for about 600 s (10 min) to obtain asample of a semiconductor device package. Whether or not thesemiconductor device is initially conducted was measured by using amultimeter (manufactured by ADVANTEST CORPORATION, R6871E) respectivelyafter the first step and after the second step. A sample in which theconnection resistance value of the peripheral portion (innercircumference portion) is 32.0 to 38.0Ω was evaluated as “A (favorableconnection)” and a sample in which the connection resistance value is avalue other than the above range or which is in an “Open” state wasevaluated as “B (failed connection).”

(4) Evaluation of Voids

An image of the appearance of each sample prepared in the above (3)after the first step and after the second step was taken with anultrasonic image diagnostic apparatus (Insight-300, manufactured byInsight k.k.) and an image of the layer formed from the adhesive for asemiconductor (adhesive layer) on the chip was taken with a scannerGT-9300UF (manufactured by Seiko Epson Corporation). The image wassubjected to color tone correction and black and white conversion withan image processing software Adobe Photoshop to distinguish voidportions, and the proportion of the void portions was calculated basedon a histogram. The area of the adhesive portion for the semiconductoron the chip was regarded as 100%. A case where the void generation rateis 5% or less was evaluated as “A,” and a case where the void generationrate is more than 5% was evaluated as “B.”

(5) Evaluation of Reflow Resistance

The package prepared in the above (3) was molded using a sealingmaterial (manufactured by Hitachi Chemical Co., Ltd., CEL9750ZHF10)(condition: 180° C./6.75 MPa/90 s). Then, the molded product wasafter-cured in a clean oven (manufactured by ESPEC CORP.) at 175° C. for5 hours. Thereafter, the package was allowed to absorb moisture at ahigh temperature under a JEDEC level 2, and then the reflow evaluation(reflow furnace: manufactured by TAMURA CORPORATION) was performed.After reflow, a sample without peel-off and with favorable connectionwas regarded as “A” and a sample in which peel-off or failed connectionoccurs was regarded as “B.” The connection evaluation method wasperformed by the same method as in the above (3).

TABLE 15 Example Ref. Example Raw material 5-1 5-2 5-3 5-4 5-1 5-2 5-3Silicone resin SR2402 — — — — — 5 10 RSN6018 5 — 10 — — — — FCA107 — 5 —10 — — — Resin component EP1032 45 45 45 45 45 45 45 having a molecularYL983 15 15 15 15 15 15 15 weight of less YL7175 5 5 5 5 5 5 5 than10000 Curing agent 2MAOK 6 6 6 6 6 6 6 Polymer component ZX1356 30 30 3030 30 30 30 having a molecular weight of 10000 or more Fluxing agentGlutaric acid 4 4 4 4 4 4 4 Resin filler EXL2655 10 10 10 10 10 10 10Inorganic filler SE2050 30 30 30 30 30 30 30 SP nano 45 45 45 45 45 4545 silica Evaluation result Thermal weight loss amount evaluation A A AA — B B Viscosity (Pa · s) 4800 4500 4400 4200 6000 4500 4300 Connectionevaluation after first step A A A A A A A Void evaluation after firststep A A A A B B B Connection evaluation after second step A A A A B A AVoid evaluation after second step A A A A B B B Reflow resistanceevaluation A A A A B B B

It was confirmed that the adhesive for a semiconductor of each ofExamples 5-1 to 5-4 to which solid silanol represented by GeneralFormula (1) is added is made voidless both after the first step andafter the second step, in which connection can be secured and the reflowresistance is also satisfied.

As described above, according to the method for continuouslymanufacturing a semiconductor device while the pressing member for mainpress-bonding is maintained at a high temperature, generation of voidscan be sufficiently suppressed and thus a semiconductor device withexcellent connection reliability can be obtained. Further, when aplurality of semiconductor chips and a plurality of substrates and/or aplurality of semiconductor chips are mainly press-bonded collectively,semiconductor devices having favorable connection can be obtained.

REFERENCE SIGNS LIST

1: semiconductor chip, 2: substrate, 3: laminate, 5: interposer, 10:semiconductor chip main body, 15, 16: circuit, 20: substrate main body,30, 32, 33: bump, 34: penetrating electrode, 40: adhesive layer, 41, 44:press-bonding head, 42, 45: stage, 43: pressing device for temporarypress-bonding, 46: pressing device for main press-bonding, 50:interposer main body, 70: solder resist, 100, 200, 300, 400, 500, 600:semiconductor device.

The invention claimed is:
 1. A method for manufacturing a semiconductordevice including a semiconductor chip, at least a substrate or anothersemiconductor chip, and an adhesive layer interposed between thesemiconductor chip and the substrate or between the semiconductor chipand the another semiconductor chip, the semiconductor chip and thesubstrate or the another semiconductor chip each having a connectionportion having a surface formed by a metal material, the connectionportion of the semiconductor chip and the connection portion of thesubstrate or the another semiconductor chip being electrically connectedby metal bonding, the method sequentially comprising the following stepsof: heating and pressuring a laminate having: the semiconductor chip;the substrate, the another semiconductor chip or a semiconductor waferincluding a portion corresponding to the another semiconductor chip; andthe adhesive layer disposed therebetween, the connection portion of thesemiconductor chip and the connection portion of the substrate or theanother semiconductor chip being disposed to face each other, byinterposing the laminate with a pair of facing pressing members fortemporary press-bonding to thereby temporarily press-bond the substrateand the another semiconductor chip or the semiconductor wafer to thesemiconductor chip; and heating and pressuring the laminate byinterposing the laminate with a pair of facing pressing members for mainpress-bonding, which is separately prepared from the pressing membersfor temporary press-bonding, to thereby electrically connect theconnection portion of the semiconductor chip and the connection portionof the substrate or the another semiconductor chip by metal bonding,wherein at least one of the pair of pressing members for temporarypress-bonding is heated to a temperature lower than a melting point ofthe metal material forming the surface of the connection portion of thesemiconductor chip and a melting point of the metal material forming thesurface of the connection portion of the substrate or the anothersemiconductor chip when the laminate is heated and pressured, at leastone of the pair of pressing members for main press-bonding is heated toa temperature equal to or higher than at least one melting point of amelting point of the metal material forming the surface of theconnection portion of the semiconductor chip, or a melting point of themetal material forming the surface of the connection portion of thesubstrate or the another semiconductor chip when the laminate is heatedand pressured, a plurality of semiconductor devices are continuouslymanufactured while maintaining a state in which at least one of the pairof pressing members for main press-bonding is heated to a temperatureequal to or higher than at least one melting point of a melting point ofthe metal material forming the surface of the connection portion of thesemiconductor chip, or a melting point of the metal material forming thesurface of the connection portion of the substrate or the anothersemiconductor chip, and a melt viscosity of the adhesive layer is 7000Pa·s or less at a temperature to which the pressing member for temporarypress-bonding is heated.
 2. The method according to claim 1, wherein theadhesive layer is a layer comprising a thermosetting resin compositioncomprising a thermosetting resin having a molecular weight of 10000 orless and a curing agent therefor.
 3. The method according to claim 2,wherein the thermosetting resin composition further comprises a polymercomponent having a weight average molecular weight of 10000 or more. 4.The method according to claim 3, wherein a weight average molecularweight of the polymer component is 30000 or more and a glass transitiontemperature of the polymer component is 100° C. or lower.
 5. The methodaccording to claim 1, wherein the adhesive layer is a layer formed by anadhesive film which is prepared in advance.
 6. The method according toclaim 1, wherein the connection portion of the semiconductor chip andthe connection portion of the substrate or the another semiconductorchip are contacted to each other and the substrate or the anothersemiconductor chip is temporarily press-bonded to the semiconductorchip.
 7. A method for manufacturing a semiconductor device including asemiconductor chip, at least a substrate or another semiconductor chip,and an adhesive layer interposed between the semiconductor chip and thesubstrate or between the chip and the another semiconductor chip, thesemiconductor chip and the substrate or the another semiconductor chipeach having a connection portion having a surface formed by a metalmaterial, the connection portion of the semiconductor chip and theconnection portion of the substrate or the another semiconductor chipbeing electrically connected by metal bonding, the method sequentiallycomprising the following steps of: heating and pressuring a laminatehaving the semiconductor chip, the substrate, the another semiconductorchip or a semiconductor wafer including a portion corresponding to theanother semiconductor chip, and the adhesive layer disposedtherebetween, the connection portion of the semiconductor chip and theconnection portion of the substrate or the another semiconductor chipbeing disposed to face each other, by interposing the laminate with apair of facing pressing members for temporary press-bonding to therebytemporarily press-bond the substrate and the another semiconductor chipor the semiconductor wafer to the semiconductor chip; and electricallyconnecting the connection portion of the semiconductor chip and theconnection portion of the substrate or the another semiconductor chip,wherein at least one of the pair of pressing members for temporarypress-bonding is heated to a temperature lower than a melting point ofthe metal material forming the surface of the connection portion of thesemiconductor chip and a melting point of the metal material forming thesurface of the connection portion of the substrate or the anothersemiconductor chip when the laminate is heated and pressured, in thestep of electrically connecting the connection portion of thesemiconductor chip and the connection portion of the substrate or theanother semiconductor chip, the laminate is heated in a heating furnaceor on a hot plate to a temperature equal to or higher than at least onemelting point of a melting point of the metal material forming thesurface of the connection portion of the semiconductor chip, or amelting point of the metal material forming the surface of theconnection portion of the substrate or the another semiconductor chip,and the adhesive layer is a layer containing the adhesive for asemiconductor comprising: (a) a resin component having a weight averagemolecular weight of less than 10000; (b) a curing agent; and (c) asilanol compound represented by the following General Formula (1):R¹-R²—Si(OH)₃  (1) in the formula, R1 represents an alkyl group or aphenyl group, and R2 represents an alkylene group.
 8. The methodaccording to claim 7, wherein a plurality of the laminates arecollectively heated in the heating furnace or on the hot plate.
 9. Themethod according to claim 7, wherein the adhesive layer is a layercomprising a thermosetting resin composition comprising a thermosettingresin having a molecular weight of 10000 or less and a curing agenttherefor.
 10. The method according to claim 7, wherein the adhesivelayer is a layer formed by an adhesive film which is prepared inadvance.
 11. The method according to claim 7, wherein the connectionportion of the semiconductor chip and the connection portion of thesubstrate or the another semiconductor chip are contacted to each otherand the substrate or the another semiconductor chip is temporarilypress-bonded to the semiconductor chip.